CWDM3011N

CWDM3011N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM3011N is a high current silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE: C3011N SOIC-8 CASE APPLICATIONS: Load/Power switches DC-DC converter circuits Power management FEATURES: Low rDS(ON) High current Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 20 11 50 2.5 -55 to +150 50 UNITS V V A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS=0, ID=250μA 30 VGS(th) VGS=VDS, ID=250μA 1.0 1.8 VSD VGS=0, IS=2.6A rDS(ON) VGS=10V, ID=11A 14 rDS(ON) VGS=4.5V, ID=9.0A 18 Crss VDS=15V, VGS=0, f=1.0MHz 100 Ciss VDS=15V, VGS=0, f=1.0MHz 860 Coss VDS=15V, VGS=0, f=1.0MHz 120 Qg(tot) VDD=15V, VGS=5.0V, ID=10A 6.3 Qgs VDD=15V, VGS=5.0V, ID=10A 2.0 Qgd VDD=15V, VGS=5.0V, ID=10A 2.3 ton VDD=15V, VGS=10V, ID=10A 20 toff RG=0.3Ω 43 MAX 100 1.0 3.0 1.2 20 30 UNITS nA μA V V V ...