CWDM305ND

CWDM305ND SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305ND is a dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE: C305 SOIC-8 CASE APPLICATIONS: Load/Power switches DC-DC converter circuits Power management FEATURES: Low rDS(ON) High current Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 20 5.8 23.2 2.0 -55 to +150 62.5 UNITS V V A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS=0, ID=250μA 30 VGS(th) VGS=VDS, ID=250μA 1.0 rDS(ON) VGS=10V, ID=2.9A 0.024 rDS(ON) VGS=5.0V, ID=2.9A 0.028 gFS VDS=5.0V, ID=5.8A 12 Crss VDS=10V, VGS=0, f=1.0MHz 50 Ciss VDS=10V, VGS=0, f=1.0MHz 500 Coss VDS=10V, VGS=0, f=1.0MHz 52 Qg(tot) VDD=15V, VGS=5.0V, ID=5.8A 4.2 Qgs VDD=15V, VGS=5.0V, ID=5.8A 0.9 Qgd VDD=15V, VGS=5.0V, ID=5.8A 1.4 ton VDD=15V, ID=5.8A, RG=10Ω 6.5 toff VDD=15V, ID=5.8A, RG=10Ω 8.5 MA...