CWDM305P

CWDM305P SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305P is a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOIC-8 CASE MARKING CODE: C503P APPLICATIONS: Load/Power switches Power supply converter circuits Battery powered portable equipment FEATURES: Low rDS(ON) (83mΩ MAX @ VGS=5.0V) High current (ID=5.3A) MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 16 5.3 21.2 2.0 -55 to +150 62.5 UNITS V V A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS=0, ID=250μA 30 VGS(th) VGS=VDS, ID=250μA 1.0 rDS(ON) VGS=10V, ID=2.7A 0.066 rDS(ON) VGS=5.0V, ID=2.7A 0.077 gFS VDS=5.0V, ID=5.3A 11 Crss VDS=10V, VGS=0, f=1.0MHz 50 Ciss VDS=10V, VGS=0, f=1.0MHz 500 Coss VDS=10V, VGS=0, f=1.0MHz 60 Qg(tot) VDD=15V, VGS=5.0V, ID=5.3A 4.7 Qgs VDD=15V, VGS=5.0V, ID=5.3A 1.4 Qgd VDD=15V, VGS=5.0V, ID=5.3A 1.7 ton V...