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CXDM3069N Dataheets PDF



Part Number CXDM3069N
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Datasheet CXDM3069N DatasheetCXDM3069N Datasheet (PDF)

CXDM3069N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MARKI.

  CXDM3069N   CXDM3069N



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CXDM3069N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MARKING: FULL PART NUMBER FEATURES: • Low rDS(ON) (50mΩ MAX @ VGS=2.5V) • High current (ID=6.9A) • Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 12 6.9 40 1.2 -55 to +150 104 UNITS V V A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=12V, VDS=0 IDSS VDS=24V, VGS=0 BVDSS VGS=0, ID=250μA 30 VGS(th) VGS=VDS, ID=250μA 0.7 0.9 rDS(ON) VGS=10V, ID=7.0A 25 rDS(ON) VGS=4.5V, ID=6.0A 28 rDS(ON) VGS=2.5V, ID=4.0A 38 Qg(tot) VDS=15V, VGS=10V, ID=5.4A 11 Qgs VDS=15V, VGS=10V, ID=5.4A 1.0 Qgd VDS=15V, VGS=10V, ID=5.4A 1.2 Crss VDS=15V, VGS=0, f=1.0MHz 47 Ciss VDS=15V, VGS=0, f=1.0MHz 580 Coss VDS=15V, VGS=0, f=1.0MHz 42 ton VDD=15V, ID=1.0A, RG=15Ω 20 toff VDD=15V, ID=1.0A, RG=15Ω 28 MAX 100 1.0 1.4 30 35 50 UNITS nA μA V V mΩ mΩ mΩ nC nC nC pF pF pF ns ns R1 (10-August 2012) CXDM3069N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-89 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source MARKING: FULL PART NUMBER w w w. c e n t r a l s e m i . c o m R1 (10-August 2012) .


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