Document
CXDM3069N
SURFACE MOUNT N-CHANNEL
ENHANCEMENT-MODE SILICON MOSFET
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.
SOT-89 CASE
APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment
MARKING: FULL PART NUMBER
FEATURES: • Low rDS(ON) (50mΩ MAX @ VGS=2.5V) • High current (ID=6.9A) • Logic level compatibility
MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VDS VGS ID IDM PD
TJ, Tstg ΘJA
30 12 6.9 40 1.2 -55 to +150 104
UNITS V V A A W °C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR VGS=12V, VDS=0
IDSS
VDS=24V, VGS=0
BVDSS
VGS=0, ID=250μA
30
VGS(th)
VGS=VDS, ID=250μA
0.7 0.9
rDS(ON)
VGS=10V, ID=7.0A
25
rDS(ON)
VGS=4.5V, ID=6.0A
28
rDS(ON)
VGS=2.5V, ID=4.0A
38
Qg(tot)
VDS=15V, VGS=10V, ID=5.4A
11
Qgs VDS=15V, VGS=10V, ID=5.4A
1.0
Qgd VDS=15V, VGS=10V, ID=5.4A
1.2
Crss
VDS=15V, VGS=0, f=1.0MHz
47
Ciss VDS=15V, VGS=0, f=1.0MHz
580
Coss
VDS=15V, VGS=0, f=1.0MHz
42
ton VDD=15V, ID=1.0A, RG=15Ω
20
toff VDD=15V, ID=1.0A, RG=15Ω
28
MAX 100 1.0
1.4 30 35 50
UNITS nA μA V V mΩ mΩ mΩ nC nC nC pF pF pF ns ns
R1 (10-August 2012)
CXDM3069N SURFACE MOUNT
N-CHANNEL ENHANCEMENT-MODE
SILICON MOSFET
SOT-89 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE: 1) Gate 2) Drain 3) Source MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (10-August 2012)
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