F1B2CCI

SEMICONDUCTOR TECHNICAL DATA F1B2CCI/CAI STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION. FEATURES ᴌAverage Output Rectified Current : IO=10A(Tc=101ᴱ). ᴌRepetitive Peak Reverse Voltage : VRRM=200V. ᴌRectifier Stack of Single Phase Center Tap Type. POLARITY ᴌCC TYPE ᴌCATHODE COMMON 13 ᴌCA TYPE ᴌANODE COMMON 13 22 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Repetitive Peak Reverse Voltage F1B2CCI F1B2CAI Average Output Rectified Current (Tc=101ᴱ) (Fig.) Peak One Cycle Surge Forward Current (Non-Repetitive) Junction Temperature Storage Temperature Range SYMBOL VRRM IO IFSM Tj Tstg RATING 200 10 60 (50Hz) 70 (60Hz) -40ᴕ150 -40ᴕ150 UNIT V A A ᴱ ᴱ GF B P A U E S K T LL M DD J NN T T 123 C DIM A B C D E F G RH J K L VM N O P Q HR S T U V MILLIMETERS 10.30 MAX 15.30 MAX 2.70Ź0.30 0.85 MAX Ѹ3.20Ź0.20 3.00Ź0.30 12.30 MAX 0.75 MAX 13.60Ź0.50 3.90 MAX 1.20 1.30 2.54 4.50Ź0.20 6.80 2.60Ź0.20 10Ɓ 25Ş 5Ş 0.5 2.60Ź0.15 O Q CC TYPE 1. ANODE 2. CATHODE COM 3. ANODE CA TYPE 1. CATHODE 2. ANODE COM 3. CATHODE TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Peak Forward Voltage (Note) Repetitive Peak Reverse Current (Note) Reverse Recovery Time VFM IRRM trr Thermal Resistance Note : A Value of one cell. Rth(j-c) TEST CONDITION IFM=5A VRRM=Rated IF=0.1A, IR=0.1A Junction to Case MIN. - TYP. - MAX. 1.4 10 400 3.5 UNIT V ỌA nS ᴱ/W Fig. EXAMPLE OF RECTIFING CIRCUIT I O =10A LOAD RECTIFIER STACK 1997. 12. 2 Revision No : 2 ...