STACK SILICON DIFFUSED DIODE
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES Average Forward Current : IO=30A. Rev...
Description
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES Average Forward Current : IO=30A. Reverse Voltage : 200V(Min)
POLARITY E30A2CDS E30A2CDR (+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak Reverse Voltage Average Forward Current
Peak 1 Cycle Surge Current
VRRM IF(AV)
IFSM
200
30 300 (10ms Condition)
Junction Temperature
Tj -40 200
Storage Temperature Range
Tstg -40 200
UNIT V A
A
E30A2CDS, E30A2CDR
STACK SILICON DIFFUSED DIODE
FE
L1 CD
L2
G
B A
DIM A B C D
MILLIMETERS 9.5+_ 0.2 8.4+_ 0.2
1.2
1
DIM E F G L1
MILLIMETERS 3.1+_ 0.1
Φ1.5
R0.5 5+_ 0.4
DIM TYPE POLARITY
L2 S R
MILLIMETERS 19.0+_ 1.0 23.0+_ 1.0
PD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage Reverse Voltage Repetitive Peak Reverse Current Reverse Recovery Time Reverse Leakage Current Under High Temperature
VFM VRM IRRM
trr
HIR
Temperature Resistance
Rth
TEST CONDITION IFM=100A IR=5mA VR=200V IF=-IR 100mA
Ta=150 , VR=VRM
Junction to case
MIN. -
200 -
-
-
TYP. -
-
1.0
MAX. 1.20
50 15
UNIT V V A S
2.5 mA
- /W
2002. 10. 9
Revision No : 1
1/1
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