E35A2CBS

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=35A. Repetive Peak Reverse Voltage : VRRM=200V POLARITY E35A2CBS E35A2CBR (+ Type) (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Revese Voltage Junction Temperature IF(AV) IFSM VRRM Tj Storage Temperature Range Tstg RATING 35 300 (60Hz) 200 -40 215 -40 215 UNIT A A V E35A2CBS, E35A2CBR STACK SILICON DIFFUSED DIODE A K H EI JD DIM A B C D E F G H I J K MILLIMETERS Φ11.5 MAX Φ12.75+0.09-0.00 Φ1.3+_ 0.04 4.2+_ 0.2 8.0+_ 0.2 TYP 0.5 Φ10.0+_ 0.2 0.4+_ 0.1x45 8.5 MAX 0.2+0.1 28.35+_ 0.5 F G B B-PF ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Voltage Reverse Current VF VR IR Transient Thermal Resistance Reverse Leakage Current Under High Temperature Reverse Recovery Time VF HIR trr Temperature Resistance Rth TEST CONDITION IFM=100A IR=5mA VR=200V IFM=100A, IM=100mA, Pw=100ms Ta=150 , VR=200V IF=0.1A, IR=0.1A DC total Junction to case MIN. - 200 - - - TYP. - - - MAX. 1.10 50 100 UNIT V V A mV 2.5 mA 15 s 0.8 /W 2002. 4. 9 Revision No : 2 1/1 ...