E50A2CBR

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=50A. Repetive Peak Reverse Voltage : VRRM=200V POLARITY E50A2CBS E50A2CBR (+ Type) (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Revese Voltage Junction Temperature Storage Temperature Range IF(AV) IFSM VRRM Tj Tstg RATING 50 380 (60Hz) 200 -40 215 -40 215 UNIT A A V E50A2CBS, E50A2CBR STACK SILICON DIFFUSED DIODE A K H EI JD DIM A B C D E F G H I J K MILLIMETERS Φ11.5 MAX Φ12.75+0.09-0.00 Φ1.3+_ 0.04 4.2+_ 0.2 8.0+_ 0.2 TYP 0.5 Φ10.0+_ 0.2 0.4+_ 0.1x45 8.5 MAX 0.2+0.1 28.35+_ 0.5 F G B B-PF ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Voltage Reverse Current Transient Thermal Resistance Reverse Leakage Current Under High Temperature Reverse Recovery Time Temperature Resistance VF VR IR VF HIR trr Rth TEST CONDITION IFM=100A IR=5mA VR=200V IFM=100A, IM=100mA, Pw=100ms Ta=150 , VR=200V IF=100mA, IR=100mA DC total Junction to case MIN. - 200 - - - TYP. - - - MAX. 1.05 50 80 UNIT V V A mV 2.5 mA 15 s 0.6 /W 2002. 4. 9 Revision No : 2 1/1 ...