E50A2CPR

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=50A. Reverse Voltage : 200V(Min.) POLARITY E50A2CPS (+ Type) E50A2CPR (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Average Forward Current Peak 1 Cycle Surge Current IF(AV) IFSM Repetitive Peak Reverse Voltage VRRM Junction Temperature Tj Storage Temperature Range Tstg RATING 50 500 (60Hz) 200 -40 200 -40 200 UNIT A A V G B L1 L2 E50A2CPS, E50A2CPR STACK SILICON DIFFUSED DIODE D F2 E F1 A DIM MILLIMETERS DIM MILLIMETERS A Φ11.7+0.1/-0 F1 0.32 B 3.85+0/-0.2 F2 3.1 D Φ1.45+_ 0.1 G 0.5 E 1.55 L1 8.4 MAX DIM TYPE POLARITY L2 S R MILLIMETERS 17.5+0/-1.5 21.5+0/-1.5 H-PF ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage VF Reverse Voltage VR Reverse Current IR Transient Thermal Resistance VF Reverse Recovery Time Reverse Leakage Current Under High Temperature trr HIR Temperature Resistance Rth TEST CONDITION IFM=100A IR=5mA VR=200V IFM=100A, IM=100mA, Pw=100ms IF=100mA, IRP=100mA Ta=150 , VR=200V Junction to Base Junction to Fin MIN. - 200 - - - - - TYP. - - - - - MAX. 1.05 50 UNIT V V A 130 mV 15 s 2.5 mA 0.8 /W 1.0 2005. 3. 7 Revision No : 0 1/1 ...