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IRFU7746PbF Dataheets PDF



Part Number IRFU7746PbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFU7746PbF DatasheetIRFU7746PbF Datasheet (PDF)

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters   G Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoH.

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Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters   G Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant StrongIRFET™ IRFR7746PbF IRFU7746PbF HEXFET® Power MOSFET D VDSS 75V RDS(on) typ. 9.5m max 11.2m ID (Silicon Limited) 59A S ID (Package Limited) 56A D S G D-Pak IRFR7746PbF GDS I-Pak IRFU7746PbF G Gate D Drain S Source Base part number Package Type IRFR7746PbF IRFU7746PbF D-Pak I-Pak Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tube 75 Orderable Part Number IRFR7746PbF IRFR7746TRPbF IRFU7746PbF RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A) 30 ID = 35A 25 20 TJ = 125°C 15 TJ = 25°C 10 5 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2014 International Rectifier 60 Limited by package 50 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 7, 2014   IRFR/U7746PbF Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance   Symbol Parameter RJC Junction-to-Case  RJA Junction-to-Ambient (PCB Mount)  RJA Junction-to-Ambient  Max. 59 42 56 230* 99 0.66 ± 20 -55 to + 175   300 116 160 See Fig 15, 16, 23a, 23b Typ. ––– ––– ––– Max. 1.52 50 110 Units A  W W/°C V °C   mJ A mJ Units °C/W   Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS IGSS RG Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Min. 75 ––– ––– ––– 2.1 ––– ––– ––– ––– ––– Typ. ––– 53 9.5 11.2 ––– ––– ––– ––– ––– 1.6 Max. ––– ––– 11.2 ––– 3.7 1.0 150 100 -100 ––– Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA  m VGS = 10V, ID = 35A  VGS = 6.0V, ID = 18A  V VDS = VGS, ID = 100µA µA VDS =75 V, VGS = 0V VDS =75V,VGS = 0V,TJ =125°C nA VGS = 20V VGS = -20V  Notes:  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)  Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 190µH, RG = 50, IAS = 35A, VGS =10V.  ISD  35A, di/dt  570A/µs, VDD  V(BR)DSS, TJ 175°C.  Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V * Pulse drain current is limited at 224A by source bonding technology. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014   IRFR/U7746PbF Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff.(ER) Coss eff.(TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) Mi.


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