Document
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters
G
Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant
StrongIRFET™ IRFR7746PbF IRFU7746PbF
HEXFET® Power MOSFET
D
VDSS
75V
RDS(on) typ.
9.5m
max
11.2m
ID (Silicon Limited)
59A
S
ID (Package Limited)
56A
D
S G
D-Pak IRFR7746PbF
GDS
I-Pak IRFU7746PbF
G Gate
D Drain
S Source
Base part number Package Type
IRFR7746PbF IRFU7746PbF
D-Pak I-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tube
75
Orderable Part Number
IRFR7746PbF IRFR7746TRPbF
IRFU7746PbF
RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A)
30 ID = 35A
25
20 TJ = 125°C 15
TJ = 25°C 10
5 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
60 Limited by package
50
40
30
20
10
0 25
50 75 100 125 150 TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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November 7, 2014
IRFR/U7746PbF
Absolute Maximum Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current
Maximum Power Dissipation Linear Derating Factor
VGS Gate-to-Source Voltage
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case RJA Junction-to-Ambient (PCB Mount) RJA Junction-to-Ambient
Max. 59 42 56 230* 99 0.66 ± 20
-55 to + 175
300
116 160
See Fig 15, 16, 23a, 23b
Typ. ––– ––– –––
Max. 1.52 50 110
Units
A
W W/°C
V °C
mJ A mJ Units °C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) IDSS
IGSS RG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance
Min. 75
–––
––– ––– 2.1 ––– ––– ––– –––
–––
Typ. –––
53
9.5 11.2 ––– ––– ––– ––– –––
1.6
Max. –––
–––
11.2 ––– 3.7 1.0 150 100 -100
–––
Units
Conditions
V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA
m
VGS = 10V, ID = 35A VGS = 6.0V, ID = 18A
V VDS = VGS, ID = 100µA
µA
VDS =75 V, VGS = 0V VDS =75V,VGS = 0V,TJ =125°C
nA
VGS = 20V VGS = -20V
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 190µH, RG = 50, IAS = 35A, VGS =10V.
ISD 35A, di/dt 570A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V * Pulse drain current is limited at 224A by source bonding technology.
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
November 7, 2014
IRFR/U7746PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss
Coss eff.(ER)
Coss eff.(TR)
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time
Turn-Off Delay Time
Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related)
Mi.