IRFS3006-7PPbF

PD - 96187 IRFS3006-7PPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free HEXFET® Power MOSFET D VDSS :RDS(on) typ. 60V 1.5m :max. 2.1m cID (Silicon Limited) 293A S ID (Package Limited) 240A D S SS S S G D2Pak 7 Pin G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) dPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy dAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter klJunction-to-Case jkJunction-to-Ambient (PCB Mount) www.irf.com Max. c293 c207 240 1172 375 2.5 ± 20 11 -55 to + 175 300 x x10lb in (1.1N m) 303 See Fig. 14, 15, 22a, 22b, Typ. ––– ––– Max. 0.4 40 ...