IRFSL3006PbF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 96188 IRFS3006PbF IRFSL3006PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 2.0m: 2.5m: c270A S ID (Package Limited) 195A DD S G D2Pak IRFS3006PbF S D G TO-262 IRFSL3006PbF G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Wire Bond Limited) dPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÃdAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter klJunction-to-Case jkJunction-to-Ambient www.irf.com Max. ™270 ™191 195 1080 375 2.5 ± 20 10 -55 to + 175 300 x x10lb in (1.1N m) 320 See Fig. 14, 15, 22a, 2...