Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
PD - 14275D
IRFB4310PbF IRFS4310PbF IRFSL4310PbF
HEXFET® Power MOSFET
D VDSS
100V
:RDS(on) typ.
5.6m
:G max. 7.0m
S ID
130A
DS G
TO-220AB IRFB4310PbF
DS G
D2Pak IRFS4310PbF
DS G
TO-262 IRFSL4310PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS dV/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
eSingle Pulse Avalanche Energy ÃAvalanche Current gRepetitive Avalanche Energy
Thermal Resistance
Symbol RθJC
Parameter
kJunction-to-Case
RθCS RθJA RθJA
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak
www.irf.com
Max.
130 92
550 300 2.0 ± 20 14 -55 to + 175
300
x x10lb in (1.1N m)
980 See Fig. 14, 15, 22a, 22b,
Typ. ––– 0.50 ––– –––
Max. 0.50 ––– 62 40
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