IRFS4321-7PPbF

Application  Motion Control Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  Hard Switched and High Frequency Circuits Benefits  Low Rdson Reduces Losses  Low Gate Charge Improves the Switching Performance  Improved Diode Recovery Improves Switching & EMI Performance  30V Gate Voltage Rating Improves Robustness  Fully Characterized Avalanche SOA IRFS4321-7PPbF   G D S HEXFET® Power MOSFET VDSS RDS(on) typ. max ID 150V 11.7m 14.7m 86A G Gate D2Pak 7Pin D Drain S Source Base part number Package Type IRFS4321-7PPbF D2Pak-7Pin Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Orderable Part Number IRFS4321-7PPbF IRFS4321TRL7PP ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS (Thermally limited) TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance   Parameter RJC Junction-to-Case  RJA Junction-to-Ambient  Max. 86 61 343 350 2.3 ± 30 120 -55 to + 175   300 Units A W W/°C V mJ °C   Typ. ––– ––– Max. 0.43* 40 Units °C/W   RJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by ...