1N6309US DIODES Datasheet

1N6309US Datasheet, PDF, Equivalent


Part Number

1N6309US

Description

500 mW ZENER DIODES

Manufacture

Compensated Deuices Incorporated

Total Page 2 Pages
Datasheet
Download 1N6309US Datasheet


1N6309US
• AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/533
• 500 mW ZENER DIODES
• NON CAVITY CONSTRUCTION
• METALLURGICALLY BONDED
1N6309US
THRU
1N6320US
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Dissapation: 500 mW@TEC=+125ºC
Power Derating: 10 mW/°C above TEC=+125ºC
Forward Voltage: 1.4V dc @ IF=1A dc (pulsed)
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
1N6309US
1N6310US
1N6311US
1N6312US
1N6313US
1N6314US
1N6315US
1N6316US
1N6317US
1N6318US
1N6319US
1N6320US
VZ2
NOM.
±5% @
IZ2
VOLTS
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
VZ1
MIN.
@IZ1
250µ A
VOLTS
1.1
1.2
1.3
1.5
1.8
2.0
2.4
2.8
3.3
4.3
5.2
6.0
IZ2
TEST
CURRENT
ZZ
@
IZ2
mA OHMS
20 30
20 30
20 29
20 24
20 22
20 20
20 18
20 16
20 14
20 8.0
20 3.0
20 3.0
ZZK IZM VZ (reg) IZSM VR
@ SURGE
IR1 IR2
ND
@ @ @250 µA
250µ A
v VZ
25ºC TA= 1-3 kHz
(1) 150ºC
OHMS mA VOLTS AMPS VOLTS µ A µ A µ V/ Hz
1200
1300
1400
1400
177
157
141
128
1.5
1.5
1.5
1.6
2.5 1.0 100 200 1.0
2.2 1.0 60 150 1.0
2.0 1.0 30 100 1.0
1.8 1.0 5.0 20 1.0
1400
1700
1400
1500
117
108
99
90
1.6
1.6
0.9
0.5
1.65 1.0 3.0 12
1.5 1.0 2.0 12
1.4 1.0 2.0 12
1.27 1.5 5.0 12
1.0
1.0
1.0
1.0
1300
1200
800
400
83
76
68
63
0.4 1.17 2.0 5.0 12
0.4 1.10 2.5 5.0 10
0.3 0.97 3.5 5.0 10
0.35 1.23 4.0 2.0 50
1.0
2.0
5.0
5.0
NOTE 1: v VZ = VZ @ 20 mAdc minus VZ @ 2mAdc
MILLIMETERS
DIM MIN MAX
D 1.78 2.16
F 0.48 0.71
G 4.19 4.95
S 0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
FIGURE 1
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/533
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
50 ˚C/W maximum
THERMAL IMPEDANCE: (ZOJX): 15
˚C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com

1N6309US
1N6309US thru 1N6320US
500
400
300
200
100
0
0
FIGURE 2
25 50 75 100 125 150 175
TEC , End cap temperature (C°)
POWER DERATING CURVE
1000
500
400
300
200
100
50
40
30
20
10
5
4
3
2
1
.1
.2
5.1 VOLT
3.3 VOLT
6.2 VOLT
.5 1
2
5 10 20
OPERATING CURRENT IZT (mA)
FIGURE 3
50 100
ZENER IMPEDANCE VS. OPERATING CURRENT


Features • AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/533 • 500 mW Z ENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED 1N6309US T HRU 1N6320US MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power D issapation: 500 mW@TEC=+125ºC Power De rating: 10 mW/°C above TEC=+125ºC For ward Voltage: 1.4V dc @ IF=1A dc (pulse d) ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified VZ2 NOM. ± 5% @ IZ2 VOLTS 1N6309US 1N6310US 1N6311 US 1N6312US 1N6313US 1N6314US 1N6315US 1N6316US 1N6317US 1N6318US 1N6319US 1N6 320US 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5 .1 5.6 6.2 6.8 VZ1 MIN. @IZ1 250µ A VO LTS 1.1 1.2 1.3 1.5 1.8 2.0 2.4 2.8 3.3 4.3 5.2 6.0 IZ2 TEST CURRENT mA 20 20 20 20 20 20 20 20 20 20 20 20 ZZ @ IZ2 OHMS 30 30 29 24 22 20 18 16 14 8.0 3.0 3.0 ZZK @ 250µ A OHMS 1200 1300 1400 1400 1400 1700 1400 1500 1300 1200 800 400 IZM VZ (reg) v VZ (1) mA 177 157 14 1 128 117 108 99 90 83 76 68 63 VOLTS 1.5 1.5 1.5 1.6 1.6 1.6 0.9 0.5 0.4 0.4 0.3 .
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