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T2KB

ETC

Bridge Rectifier

T2KB(20~80) Bridge Rectifier ■ Features ● Io 2.0A ● VRRM 200V~800V ● Glas s passivated chip ● High surge forwa...


ETC

T2KB

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Description
T2KB(20~80) Bridge Rectifier ■ Features ● Io 2.0A ● VRRM 200V~800V ● Glas s passivated chip ● High surge forward current capability ● Small size ■ Applications ● General purpose 1 phase Bridge rectifier applications ■ Outline Dimensions and Mark Unit:mm 、() Type 、Class(example) 2.5×45° 141.45.5±±0.02.2 T2KB60 930 () Date Code(example) 3.5±0.1 5.0±0.1 11..0±0.2 + ~ ~- 1.25±0.1 1.3±0.1 0.7±0.1 1.0±0.1 0.5±0.02 2.2 14.5±0.5 4±0.1 4±0.1 4±0.1 ■() Limiting Values(Absolute Maximum Rating) Item Symbol Unit Conditions T2KB20 T2KB40 T2KB60 T2KB80 Storage Temperature Tstg ℃ -40 ~ +150 Junction Temperature Repetitive Peak Reverse Voltage Tj ℃ VRRM V +150 200 400 600 800 Average Rectified Output Current () Surge(Non-repetitive)Forward Current Io IFSM A 50HZ ,,Ta=25℃ 50HZsine wave, R-load, Ta=25℃ A 50HZ,,Ta=25℃ 50HZsine wave, 1 cycle, Ta=25℃ 2.0 80 ■ (Ta=25℃ ) Electrical Characteristics(Ta=25℃ Unless otherwise specified) Item Symbol Unit Test Condition Peak Forward Voltage Peak Reverse Current Thermal Resistance VFM IRRM1 RθJ-A RθJ-L V μA ℃/W IFM=2.0A, , IFM=2.0A, Pulse measurement, Rating of per diode VRM=VRRM ,, VRM=VRRM , Pulse measurement, Rating of per diode Between junction and ambient Between junction and lead Max 1.10 10 45 8 IF(A) P(W) T2KB(20~80) ■() Characteristics(Typical) 5 2 Ta=150℃ 1 Ta=25℃ 0.5 0.2 0.1 0.6 0.7 0.8 0.9 1 pulse test per one diode 1.1 1.2 1.3 1 .4 VF(V) Forward Characteristics ...




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