Power Transistor MN638S
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VCBO
380±50
V
VCEO
380±50
V
VE...
Power
Transistor MN638S
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VCBO
380±50
V
VCEO
380±50
V
VEBO
6V
IC
6 (pulse 10)
A
IB 1 A
PC
60 (Tc=25ºC)
W
Tj 150 ºC
Tstg
–55 to +150
ºC
Electrical Characteristics
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat)
Test Conditions VCB=330V VEB=6V IC=25mA
VCE=2V, IC=3A IC=4A, IB=20mA
Ratings 10max 20max 330 to 430 1500min 1.5max
(Ta = 25ºC) Unit µA mA V
External Dimensions TO220S
10.2±0.3
4.44±0.2 1.3±0.2
(1.4)
+0.3
10.0 –0.5 8.6±0.3
Va
1.6
b 0.1+–00..12
(1.5)
+0.3
3.0 –0.5
2.54±0.5
1.27±0.2
+0.2
0.86 –0.1 1.2±0.2
2.54±0.5
0.4±0.1
a) Part No. b) Lot No.
(Unit: mm)
■ IC — VCE Characteristics (typ.)
10 150mA 120mA
90m6A0mA
20mA 18mA 4mA
2mA
IC (A)
5 IB=1mA
VCE (sat) (V)
■ VCE (sat) — IB Characteristics (typ.)
3
2
IC = 7A 5A 3A 1 1A
IC (A)
■ IC — VBE Temperature Characteristics (typ.)
10 (VBE =4V)
5
e) )
(5(ºCCCaa(sseCeatsteeemtmpepemrepra teartuaruteru)er
12 25ºC –30ºC
0 02 46 VCE (V)
0 0.2 0.5 1
5 10 IB (mA)
50 100 200
0 0 1.0 2.0 2.4 VBE (V)
■ hFE — IC Characteristics (typ.)
10000 5000
1000 500
hFE
100 50
10 0.02
0.1 0.5 1 IC (A)
(VCE = 2V) Typ
5 10
■ hFE — IC Temperature Characteristics (typ.)
10000
(VCE = 2V)
5000
125ºC 1000 25ºC 500 –55ºC
hFE
100 50
20 0.02
0.1 0.5 1.0 IC (A)
5 10
■ j-c j-a —t Characteristics
100
j-c j-a (ºC/W)
10 j-a
j-c
1
0.1 0.001
0.01
0.1 t (s)
1
10
94
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