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1N6315US Dataheets PDF



Part Number 1N6315US
Manufacturers Compensated Deuices Incorporated
Logo Compensated Deuices Incorporated
Description 500 mW ZENER DIODES
Datasheet 1N6315US Datasheet1N6315US Datasheet (PDF)

• AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/533 • 500 mW ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED 1N6309US THRU 1N6320US MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Dissapation: 500 mW@TEC=+125ºC Power Derating: 10 mW/°C above TEC=+125ºC Forward Voltage: 1.4V dc @ IF=1A dc (pulsed) ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified VZ2 NOM. ±5% @ IZ2 VOLTS 1N6309US 1N6310US 1N6311US 1N6312.

  1N6315US   1N6315US


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• AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/533 • 500 mW ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED 1N6309US THRU 1N6320US MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Dissapation: 500 mW@TEC=+125ºC Power Derating: 10 mW/°C above TEC=+125ºC Forward Voltage: 1.4V dc @ IF=1A dc (pulsed) ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified VZ2 NOM. ±5% @ IZ2 VOLTS 1N6309US 1N6310US 1N6311US 1N6312US 1N6313US 1N6314US 1N6315US 1N6316US 1N6317US 1N6318US 1N6319US 1N6320US 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 VZ1 MIN. @IZ1 250µ A VOLTS 1.1 1.2 1.3 1.5 1.8 2.0 2.4 2.8 3.3 4.3 5.2 6.0 IZ2 TEST CURRENT mA 20 20 20 20 20 20 20 20 20 20 20 20 ZZ @ IZ2 OHMS 30 30 29 24 22 20 18 16 14 8.0 3.0 3.0 ZZK @ 250µ A OHMS 1200 1300 1400 1400 1400 1700 1400 1500 1300 1200 800 400 IZM VZ (reg) v VZ (1) mA 177 157 141 128 117 108 99 90 83 76 68 63 VOLTS 1.5 1.5 1.5 1.6 1.6 1.6 0.9 0.5 0.4 0.4 0.3 0.35 AMPS 2.5 2.2 2.0 1.8 1.65 1.5 1.4 1.27 1.17 1.10 0.97 1.23 VOLTS 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 2.0 2.5 3.5 4.0 IZSM SURGE VR IR1 @ 25ºC µA 100 60 30 5.0 3.0 2.0 2.0 5.0 5.0 5.0 5.0 2.0 IR2 ND @ @250 µA TA= 1-3 kHz 150ºC µA 200 150 100 20 12 12 12 12 12 10 10 50 µ V/ Hz 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 5.0 5.0 DIM D F G S MILLIMETERS MIN MAX 1.78 2.16 0.48 0.71 4.19 4.95 0.08MIN. INCHES MIN MAX 0.070 0.085 0.019 0.028 0.165 0.195 0.003MIN. TYPE FIGURE 1 DESIGN DATA CASE: D-5D, Hermetically sealed glass case, per MIL-PRF- 19500/533 LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 50 ˚C/W maximum NOTE 1: v VZ = VZ @ 20 mAdc minus VZ @ 2mAdc THERMAL IMPEDANCE: (ZOJX): 15 ˚C/W maximum POLARITY: Diode to be operated with the banded (cathode) end positive. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately + 4PPM / °C. The COE of the Mounting Surface System should be selected to provide a suitable match with this device. 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: [email protected] 1N6309US Pd, Rated Power Dissipation (mW) 500 400 300 200 100 0 0 25 50 thru FIGURE 2 1N6320US 75 100 125 150 175 TEC , End cap temperature (C°) POWER DERATING CURVE 1000 500 400 300 200 ZENER IMPEDANCE ZZT (OHMS) 100 50 40 30 20 10 5 4 3 2 1 .1 .2 .5 1 2 5 10 20 50 100 OPERATING CURRENT IZT (mA) 3.3 VOLT 5.1 VOLT 6.2 VOLT FIGURE 3 ZENER IMPEDANCE VS. OPERATING CURRENT .


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