Super Fast Recovery Diode
Super Fast Recovery Diode
RF505BM6S
Datasheet
Series Standard Fast Recovery
Dimensions (Unit : mm)
Land Size Figu...
Description
Super Fast Recovery Diode
RF505BM6S
Datasheet
Series Standard Fast Recovery
Dimensions (Unit : mm)
Land Size Figure (Unit : mm)
6.0
3.0 2.0 6.0
Application General rectification
1
Features 1) Low switching loss 2) Low forward voltage 3) High current overload capacity
ROHM : TO-252 JEITA : SC-63
1 : Manufacture Date
Construction Silicon epitaxial planar type
Taping Dimensions (Unit : mm)
1.6 1.6
TO-252 2.3 2.3
Structure
Cathode
Open Anode
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
600 V
Reverse voltage
VR Direct voltage
600 V
Average rectified foward current
Io 60Hz half sin wave , Resistive load Tc=90°C
5
A
Forward current surge peak
IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C
50
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- 55 to 150 °C
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=5A - 1.3 1.7 V
Reverse current
IR
VR=600V
- 0.05 10 A
Reverse recovery time
trr IF=0.5A, IR=1A, Irr=0.25×IR - 22 30 ns
Thermal resistance
Rth(j-c)
Junction to case
- - 6.0 °C / W
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1/4
2018.12 - Rev.C
RF505BM6S Electrical Characteristic Curves
Datasheet
FORWARD CURRENT : IF(A)
100
10
1 Tj = 150°C Tj = 125°C
0.1 Tj = 75°C
0.01 0
Tj = 25°C 500 1000 1500 2000 2500
FORWARD VOLTAGE : VF(mV) VF-...
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