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M93C86-DRE Datasheet, Equivalent, serial EEPROM.MICROWIRE serial EEPROM MICROWIRE serial EEPROM |
　
　
　
| Part | M93C86-DRE |
|---|---|
| Description | MICROWIRE serial EEPROM |
| Feature | M93Cx6-DRE
16-Kbit, 8-Kbit, 4-Kbit, 2-K bit and 1-Kbit (8-bit or 16-bit wide) M ICROWIRE™ serial EEPROM 105 °C Opera tion
Datasheet - production data
SO8 ( MN) 150 mil width
TSSOP8 (DW) 169 mil w idth
WFDFPN8 (MF) 2 x 3 mm
Features
†¢ Industry standard MICROWIREâ„¢ bus †¢ Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb • Dual organization: by word (x16) or byte (x8) • Write – Byte within 4 ms – Word within 4 ms • RE ADY/BUSY signal during programming • 2 MHz clock rate • Sequential read op eration • Single supply voltage: 1. 8 V to 5. 5 V • Extended temperature ran ge: -40 °C up to 105 °C • Enhanced ESD pr . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | M93C86-DRE |
|---|---|
| Description | MICROWIRE serial EEPROM |
| Feature | M93Cx6-DRE
16-Kbit, 8-Kbit, 4-Kbit, 2-K bit and 1-Kbit (8-bit or 16-bit wide) M ICROWIRE™ serial EEPROM 105 °C Opera tion
Datasheet - production data
SO8 ( MN) 150 mil width
TSSOP8 (DW) 169 mil w idth
WFDFPN8 (MF) 2 x 3 mm
Features
†¢ Industry standard MICROWIREâ„¢ bus †¢ Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb • Dual organization: by word (x16) or byte (x8) • Write – Byte within 4 ms – Word within 4 ms • RE ADY/BUSY signal during programming • 2 MHz clock rate • Sequential read op eration • Single supply voltage: 1. 8 V to 5. 5 V • Extended temperature ran ge: -40 °C up to 105 °C • Enhanced ESD pr . |
| Manufacture | STMicroelectronics |
| Datasheet |
　
　
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