70PT SCRs Datasheet

70PT Datasheet, PDF, Equivalent


Part Number

70PT

Description

Stansard SCRs

Manufacture

nELL

Total Page 4 Pages
Datasheet
Download 70PT Datasheet


70PT
SEMICONDUCTOR
70PT Series RRooHHSS
Stansard SCRs, 70A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
70
1000 to 1600
40 / 80
Unit
A
V
mA
DESCRIPTION
The 70PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where power handling and power dissipation are
critical, such as solid state relay, welding equipment
and high power motor control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation(2500VRMS).
A
K AG
TO-3P (non-Insulated)
(70PTxxB)
K AG
TO-3P (Insulated)
(70PTxxBI)
KA G
TO-247AB (non-Insulated)
(70PTxxC)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
VD = 67% VDRM, tp = 200μs, IG = 0.3A
dIG/dt = 0.3A/μs
IT(RMS)
IT(AV)
ITSM
I2t
TO-247AB
TO-3P
TO-3P insulated
TO-247AB
TO-3P
TO-3P insulated
F =50 Hz
F =60 Hz
tp = 10 ms
dI/dt F = 60 Hz
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
IGM
PGM
PG(AV)
VDRM
VRRM
Tstg
Tj
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj =125ºC
Maximum peak reverse gate voltage VRGM
www.nellsemi.com
Page 1 of 4
Tc=80°C
Tc=75°C
Tc=65°C
Tc=80°C
Tc=75°C
Tc=65°C
t = 20 ms
t = 16.7 ms
Tj = 125ºC
VALUE
70
44
550
575
1513
150
UNIT
A
A
A
A2s
A/µs
Tj = 125ºC
Tj = 125ºC
5
10
2
A
W
W
1000 to 1600
V
- 40 to + 150
- 40 to + 125
5
ºC
V

70PT
SEMICONDUCTOR
70PT Series RRooHHSS
ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified)
SYMBOL
TEST CONDITIONS
70PT10xx
70PT12xx
70PT16xx
IGT
VD = 12V, RL = 33Ω
VGT
VGD VD = VDRM, RL = 3.3KΩ, RGK = 220Ω
IH IT = 500mA, Gate open
IL IG = 1.2×IGT
Tj = 125°C
Max.
Max.
Min.
Max.
Max.
40 80
1.5
0.2
100 120
130 150
dV/dt
VD = 67% VDRM, Gate open
Tj = 125°C Min.
1000
1000
VTM
IDRM
IRRM
IT = 90A, tP = 380µs
VD=VDRM, VR=VRRM
RGK = 220Ω
Tj = 25°C
Tj = 25°C
Tj = 125°C
Max.
Max.
Max.
1.6
10
6
Vto Threshold Voltage
Tj = 125°C Max.
1.02
Rd Dynamic Resistance
Tj = 125°C Max.
85
Unit
mA
V
V
mA
mA
V/µs
V
µA
mA
V
mΩ
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Junction to case (DC)
Rth(j-a)
Junction to ambient
S=Copper surface under tab
Parameter
TO-3P/TO-247AB
TO-3P insulated
TO-3P/TO-247AB/TO-3P insulated
VALUE
0.68
0.80
50
UNIT
°C/W
°C/W
PRODUCT SELECTOR
PART NUMBER
70PTxxB/70PTxxBI
70PTxxC
1000 V
V
V
VOLTAGE (x x)
1200 V
V
V
1600 V
V
V
SENSITIVITY
40mA / 80mA
40mA / 80mA
PACKAGE
TO-3P
TO-247AB
ORDERING INFORMATION
ORDERING TYPE
MARKING
70PTxxB
70PTxxB
70PTxxBI
70PTxxBI
70PTxxC
70PTxxC
Note: xx = voltage
PACKAGE
TO-3P
TO-3P insulated
TO-247AB
WEIGHT
4.3g
4.8g
5g
BASE Q,TY
30
30
30
DELIVERY MODE
Tube
Tube
Tube
www.nellsemi.com
Page 2 of 4


Features SEMICONDUCTOR 70PT Series RRooHHSS Sta nsard SCRs, 70A Main Features Symbol I T(RMS) VDRM/VRRM IGT Value 70 1000 to 1600 40 / 80 Unit A V mA DESCRIPTION The 70PT series of silicon controlled r ectifiers are high performance glass pa ssivated technology, and are suitable f or general purpose applications, where power handling and power dissipation ar e critical, such as solid state relay, welding equipment and high power motor control. Base on a clip assembly techno logy, they offer a superior performance in surge current capabilities. Thanks to their internal ceramic pad, they pro vide high voltage insulation(2500VRMS). A K AG TO-3P (non-Insulated) (70PTxx B) K AG TO-3P (Insulated) (70PTxxBI) KA G TO-247AB (non-Insulated) (70PTxxC) 2(A) 3(G) 1(K) ABSOLUTE MAXIMUM RATI NGS PARAMETER SYMBOL TEST CONDITIONS RMS on-state current full sine wave ( 180° conduction angle ) Average on-sta te current (180° conduction angle) Non repetitive surge peak on-state current (full cycle, Tj initial =.
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