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BUK7K6R8-40E Dataheets PDF



Part Number BUK7K6R8-40E
Manufacturers NXP
Logo NXP
Description Dual N-channel MOSFET
Datasheet BUK7K6R8-40E DatasheetBUK7K6R8-40E Datasheet (PDF)

LFPAK56D BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to .

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LFPAK56D BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) of greater than 1 V at 175 °C 3. Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics FET1 and FET2 RDSon drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C; resistance Fig. 12 Dynamic characteristics FET1 and FET2 QGD gate-drain charge ID = 20 A; VDS = 32 V; VGS = 20 V; Tj = 25 °C; Fig. 14; Fig. 15 Min Typ Max Unit - - 40 V - - 40 A - - 64 W - 5.8 6.8 mΩ - 9.1 - nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 drain1 8 D1 drain1 Simplified outline 8765 Graphic symbol D1 D1 D2 D2 1234 LFPAK56D (SOT1205) S1 G1 S2 G2 mbk725 6. Ordering information Table 3. Ordering information Type number Package Name BUK7K6R8-40E LFPAK56D Description Plastic single ended surface mounted package (LFPAK56D); 8 leads Version SOT1205 7. Marking Table 4. Marking codes Type number BUK7K6R8-40E Marking code 76E840 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C VDGR drain-gate voltage RGS = 20 kΩ; Tj ≥ 25 °C; Tj ≤ 175 °C VGS gate-source voltage Tj ≤ 175 °C; DC ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Ptot total power dissipation Tmb = 25 °C; Fig. 2 BUK7K6R8-40E All information provided in this document is subject to legal disclaimers. Product data sheet 6 November 2013 Min Max Unit - 40 V - 40 V -20 20 V - 40 A - 40 A - 276 A - 64 W © NXP N.V. 2013. All rights reserved 2 / 13 NXP Semiconductors BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET Symbol Parameter Tstg storage temperature Tj junction temperature Tsld(M) peak soldering temperature Source-drain diode FET1 and FET2 IS source current ISM peak source current Avalanche Ruggedness FET1 and FET2 EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 40 A; Vsup ≤ 40 V; VGS = 10 V; Tj(init) = 25 °C; Fig. 3 Min -55 -55 - - [1][2] - [1] Refer to application note AN10273 for further information [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C 100 ID (A) 80 003aaj739 120 Pder (%) 80 60 Max Unit 175 °C 175 °C 260 °C 40 A 276 A 130 mJ 03aa16 40 (1) 20 40 0 0 50 100 150 200 Tmb (°C) Fig. 1. Continuous drain current as a function of mounting base temperature 0 0 50 100 150 200 Tmb (°C) Fig. 2. Normalized total power dissipation as a function of mounting base temperature BUK7K6R8-40E Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 © NXP N.V. 2013. All rights reserved 3 / 13 NXP Semiconductors BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET 103 IAL (A) 102 10 1 10-1 003aaj673 (1) (2) (3) 10-2 10-3 10-2 10-1 1 10 tAL (ms) Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2 103 ID (A) 102 10 Limit RDSon = VDS / ID 003aaj738 tp =10 µ s 100 µ s DC 1 ms 1 10 ms 100 ms 10-1 10-1 1 10 102 VDS (V) Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions Fig. 5 BUK7K6R8-40E Product data sheet All information provided in this document is subject to legal disclaimers. 6 November 2013 Min Typ Max Unit - - 2.36 K/W © NXP N.V. 2013. All rights reserved 4 / 13 NXP Semiconductors BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET Symbol Rth(j-a) Parameter thermal resistance from junction to ambient Conditions Minimum footprint; mounted on a printed circ.


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