Document
LFPAK56D
BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
6 November 2013
Product data sheet
1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
• Dual MOSFET • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) of greater than 1 V at 175 °C
3. Applications
• 12 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 20 A; VDS = 32 V; VGS = 20 V;
Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit - - 40 V - - 40 A - - 64 W
- 5.8 6.8 mΩ
- 9.1 - nC
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NXP Semiconductors
BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 drain1 8 D1 drain1
Simplified outline
8765
Graphic symbol
D1 D1
D2 D2
1234
LFPAK56D (SOT1205)
S1 G1 S2 G2 mbk725
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7K6R8-40E
LFPAK56D
Description
Plastic single ended surface mounted package (LFPAK56D); 8 leads
Version SOT1205
7. Marking
Table 4. Marking codes Type number BUK7K6R8-40E
Marking code 76E840
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ; Tj ≥ 25 °C; Tj ≤ 175 °C
VGS gate-source voltage
Tj ≤ 175 °C; DC
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Tmb = 100 °C; VGS = 10 V; Fig. 1
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
BUK7K6R8-40E
All information provided in this document is subject to legal disclaimers.
Product data sheet
6 November 2013
Min Max Unit - 40 V
- 40 V
-20 20
V
- 40 A
- 40 A
- 276 A
- 64 W
© NXP N.V. 2013. All rights reserved
2 / 13
NXP Semiconductors
BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
Symbol
Parameter
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode FET1 and FET2
IS source current
ISM peak source current
Avalanche Ruggedness FET1 and FET2
EDS(AL)S
non-repetitive drain-source avalanche energy
Conditions
Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 40 A; Vsup ≤ 40 V; VGS = 10 V; Tj(init) = 25 °C; Fig. 3
Min -55 -55 -
-
[1][2] -
[1] Refer to application note AN10273 for further information [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C
100 ID (A)
80
003aaj739
120
Pder (%)
80 60
Max Unit 175 °C 175 °C 260 °C
40 A 276 A
130 mJ
03aa16
40
(1)
20
40
0 0 50 100 150 200 Tmb (°C)
Fig. 1. Continuous drain current as a function of mounting base temperature
0 0 50 100 150 200 Tmb (°C)
Fig. 2. Normalized total power dissipation as a function of mounting base temperature
BUK7K6R8-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 November 2013
© NXP N.V. 2013. All rights reserved
3 / 13
NXP Semiconductors
BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
103 IAL (A)
102
10
1
10-1
003aaj673
(1) (2)
(3)
10-2 10-3
10-2
10-1
1 10 tAL (ms)
Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2
103 ID (A)
102
10
Limit RDSon = VDS / ID
003aaj738
tp =10 µ s 100 µ s
DC 1 ms
1 10 ms 100 ms
10-1 10-1 1 10 102 VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Symbol Rth(j-mb)
Thermal characteristics Parameter
thermal resistance from junction to mounting base
Conditions Fig. 5
BUK7K6R8-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 November 2013
Min Typ Max Unit - - 2.36 K/W
© NXP N.V. 2013. All rights reserved
4 / 13
NXP Semiconductors
BUK7K6R8-40E
Dual N-channel 40 V, 6.8 mΩ standard level MOSFET
Symbol Rth(j-a)
Parameter
thermal resistance from junction to ambient
Conditions
Minimum footprint; mounted on a printed circ.