C5843

DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT = 60 GHz, fmax = 60 GHz) 6-pin lead-less minimold (M16, 1208 package) ORDERING INFORMATION Part Number 2SC5843 2SC5843-T3 Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form 8 mm wide embossed taping Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC P Note tot Tj Tstg Ratings 8.0 2.3 1.2 35 80 150 −65 to +150 Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Unit V V V mA mW °C °C Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconducto...