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RF2044A Dataheets PDF



Part Number RF2044A
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description GENERAL PURPOSE AMPLIFIER
Datasheet RF2044A DatasheetRF2044A Datasheet (PDF)

RF2044A GENERAL PURPOSE AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Micro-X Ceramic Features  DC to >6000MHz Operation  Internally matched Input and Output  18.5dB Small Signal Gain @ 2 GHz  4.0dB Noise Figure  50mW Linear Output Power  Single Positive Power Supply Applications  Broadband, Low-Noise Gain Blocks  IF or RF Buffer Amplifiers  Driver Stage for Power Ampli- fiers  Final PA for Low-Power Appli- cations  High Reliability Applications  Broadband Test Equipme.

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RF2044A GENERAL PURPOSE AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Micro-X Ceramic Features  DC to >6000MHz Operation  Internally matched Input and Output  18.5dB Small Signal Gain @ 2 GHz  4.0dB Noise Figure  50mW Linear Output Power  Single Positive Power Supply Applications  Broadband, Low-Noise Gain Blocks  IF or RF Buffer Amplifiers  Driver Stage for Power Ampli- fiers  Final PA for Low-Power Appli- cations  High Reliability Applications  Broadband Test Equipment RF IN 1 GND 4 M ARKIN G - 74 3 RF OUT 2 GND Functional Block Diagram Product Description The RF2044A is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 input and output impedances and requires only two external DC biasing elements to operate as specified. Ordering Information RF2044ARF2044AGeneral Purpose Amplifier RF204XPCBA-41X General Purpose Amplifier Fully Assembled Evaluation Board DS120706 Optimum Technology Matching® Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS InGaP HBT SiGe HBT Si BJT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 8 RF2044A Absolute Maximum Ratings Parameter Input RF Power Operating Ambient Temperature Storage Temperature Rating +13 -40 to +85 -60 to +150 Unit dBm °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Specification Min. Typ. Max. Unit Condition Overall Frequency Range DC to >6000 T=25 °C, ICC=65mA MHz 3dB Bandwidth >3 GHz Gain 19.5 dB Freq=100MHz 19.5 dB Freq=850MHz 17.0 18.5 20 dB Freq=2000MHz 18.0 dB Freq=3000MHz 17.0 Freq=4000MHz 14.1 Freq=6000MHz Noise Figure 3.5 dB Freq=2000MHz Input VSWR <1.6:1 In a 50 system, DC to 5000MHz <1.5:1 In a 50 system, 5000MHz to 6000MHz Output VSWR <1.4:1 In a 50 system, DC to 3000MHz <1.5:1 In a 50 system, 3000MHz to 6000MHz Output IP3 Output P1dB Reverse Isolation +29 +16.5 +32 +17.5 22 dBm Freq=2000MHz dBm Freq=2000MHz dB Freq=2000MHz Thermal ThetaJC Maximum Measured Junction Temperature at DC Bias Conditions 270 166 °C/W °C ICC=65mA, PDISS=300mW (See Note 1.) VPIN = 4.55 V TAMB = +85°C Mean Time To Failure Power Supply >100 years TAMB = +85 °C With 24 bias resistor, T=+25°C Device Operating Voltage Operating Current 4.4 4.5 4.6 V At pin 3 with ICC=65mA 5.5 5.9 6.5 V At evaluation board connector, ICC=65mA 65 mA See Note 2. NOTES: Note 1: The RF2044A must be operated at or below 65mA in order to achieve the thermal performance stated above. Operating at 65mA will ensure the best possible combination of reliability and electrical performance. Note 2: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 65mA over all intended operating condi- tions. 2 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120706 RF2044A Pin Function Description Interface Schematic 1 RF IN RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in mos.


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