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RF2818 Dataheets PDF



Part Number RF2818
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description GPS LOW NOISE AMPLIFIER
Datasheet RF2818 DatasheetRF2818 Datasheet (PDF)

RF2818GPS Low Noise Amplifier with Integrated Input/Output SAW Filters RF2818 GPS LOW NOISE AMPLIFIER WITH INTEGRATED INPUT/OUTPUT SAW FILTERS Package: Module, 3.0mmx2.5mmx1.0mm Features  Compact Footprint: 3.0 mm x 2.5 mm x 1.0 mm  Only Two External Components Required  No External DC Blocking Capacitors Required - Lowest BOM Cost and Small Solution Size  Low Noise Figure: 1.55dB (Typ)  High Gain: 14dB (Typ)  Excellent Linearity IIP3: +6dBm (Typ)  Integrated Input and Output SAW Filt.

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RF2818GPS Low Noise Amplifier with Integrated Input/Output SAW Filters RF2818 GPS LOW NOISE AMPLIFIER WITH INTEGRATED INPUT/OUTPUT SAW FILTERS Package: Module, 3.0mmx2.5mmx1.0mm Features  Compact Footprint: 3.0 mm x 2.5 mm x 1.0 mm  Only Two External Components Required  No External DC Blocking Capacitors Required - Lowest BOM Cost and Small Solution Size  Low Noise Figure: 1.55dB (Typ)  High Gain: 14dB (Typ)  Excellent Linearity IIP3: +6dBm (Typ)  Integrated Input and Output SAW Filters for Optimum PCS and Cell Band Rejection: - Cell: 101dBc (Typ) - PCS: 74dBc (Typ)  Operable Over Wide Supply Voltage Range: 1V to 3.6V  Adjustable Bias and Shutdown Capability Applications  Cellular Handsets  Personal Navigation Devices INPUT VDD RF2818 OUTPUT VSD Functional Block Diagram Product Description The RF2818 is a GPS Low Noise Amplifier with integrated SAW filters at the input and output. Low noise figure, along with high gain, achieved by the RF2818 makes it very suitable for compact GPS receivers requiring reduced front-end noise and high sensitivity. This module builds upon RFMD’s leading edge pHEMT process and integrates input matching and low loss high rejection SAW filters at both the input and output. This results in high performance and a reduced solution size. The ease of implementation simplifies the receiver design. The RF2818 is packaged in a compact 3.0mmx2.5mmx1.0mm package with only two external components required to achieve the best-in-class performance. Ordering Information RF2818 RF2818PCBA-410 GPS Low Noise Amplifier with Integrated Input/Output SAW Filters Fully Assembled Evaluation Board DS100714 Optimum Technology Matching® Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS RF MEMS InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 8 RF2818 Absolute Maximum Ratings Parameter VDD IDD Maximum Input Power - CW, VDD=2.7V, IDD=8.4mA PDISS Max Voltage on RF Output (Pin 8) TJ (Junction Temperature) Storage Temperature Operating Temperature Rating 3.6 20 +15 72 +5 150 -65 to +150 -40 to +85 Unit V mA dBm mW V °C °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter High Current Mode Gain (G) Noise Figure (NF)* Input P1dB Compressed Power (IP1dB) Input 3rd Order Intercept Point (2-tone at fc±2.5MHz) Input Return Loss (S11) Output Return Loss (S22) Reverse Isolation (S12) Cell Band Rejection (Relative to 1575GHz at 827.5MHz PCS Band Rejection (Relative to 1575MHz at 1885MHz) Supply DC Current at Shutdown (SD) Voltage VSD=2.7V (IDD) ISH (Shutdown Current) Specification Min. Typ. Max. 12.5 80 70 14 1.55 -6.0 +6 -7.5 -14 -24 101 74 7 0.40 1.95 10 Unit dB dB dBm dBm dB dB dB dBc dBc mA uA Condition VDD= VSD=2.7V, IDD=7mA, Temp=25°C Nominal Operating Conditions (unless otherwise specified) 2 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS100714 RF2818 Parameter Low Current Mode Gain (G) Noise Figure (NF)* Input P1dB Compressed Power (IP1dB) Input 3rd Order Intercept Point (2-tone at fc±2.5MHz) Input Return Loss (S11) Output Return Loss (S22) Reverse Isolation (S12) Cell Band Rejection (Relative to 1575MHz at 827.5MHz PCS Band Rejection (Relative to 1575MHz at 1885MHz) Supply DC Current at Shutdown (SD) Voltage VSD=2.7V (IDD) ISH (Shutdown Current) Specification Min. Typ. Max. 13.1 1.7 -6.5 +5.7 -7.2 -13 -23 100 72 4 0.40 Unit dB dB dBm dBm dB dB dB dBc dBc mA uA Condition VDD= VSD=1.76V, IDD=4mA, Temp=25°C No.


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