RF3855

RF38553.1 V Linear Power Amplifier RF3855 3.1V LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 4 x 4 GND RF IN NC NC NC Features  Single 3.1V Supply Applications  L-BAND SATCOM Applications 1 16 15 14 13 VPD1 2 12 VCC1 MODE 3 11 VCC1 VPD2 4 10 VCC 56789 GND NC RF OUT RF OUT GND Functional Block Diagram Product Description The RF3855 is a high-power, high-efficiency linear amplifier IC targeting LBAND SATCOM Applications. The device is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier applications in the 1611MHz to 1618MHz band. The package is a 4mmx4mm, 16-pin QFN plastic package with backside ground. Ordering Information RF3855 3.1V Linear Power Amplifier DS110914 Optimum Technology Matching® Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS InGaP HBT SiGe HBT Si BJT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 6 RF3855 Absolute Maximum Ratings Parameter Supp...