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2SD2118. D2118 Datasheet

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2SD2118. D2118 Datasheet






D2118 2SD2118. Datasheet pdf. Equivalent




D2118 2SD2118. Datasheet pdf. Equivalent





Part

D2118

Description

2SD2118



Feature


Low VCE(sat) transistor (strobe flash) 2 SD2118 zFeatures 1) Low VCE(sat). VCE( sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain character istics. 3) Complements the 2SB1412. zD imensions (Unit : mm) 2SD2118 zStructu re Epitaxial planar type NPN silicon tr ansistor ROHM : CPT3 EIAJ : SC-63 zAb solute maximum ratings (Ta=25°C) Para meter Symbol Limi.
Manufacture

Rohm

Datasheet
Download D2118 Datasheet


Rohm D2118

D2118; ts Collector-base voltage VCBO 50 Co llector-emitter voltage VCEO 20 Emit ter-base voltage VEBO 6 Collector cu rrent IC 5 ICP 10 Collector power di ssipation 2SD2118 Junction temperatur e PC Tj 1 10 150 Storage temperature Tstg −55 to +150 ∗1 Single puls e Pw=10ms Unit V V V A(DC) A(Pulse) ∠—1 W W(Tc=25°C) °C °C ∗ Denotes h FE (1) Base (2) Collector (3.


Rohm D2118

) Emitter zElectrical characteristics ( Ta=25°C) Parameter Symbol Min. Coll ector-base breakdown voltage Collector- emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff curr ent Emitter cutoff current Collector-em itter saturation voltage DC current tra nsfer ratio Transition frequency Output capacitance ∗ Measured using pulse c urrent. BVCBO BVCEO .


Rohm D2118

BVEBO ICBO IEBO VCE(sat) hFE fT Cob 50 20 6 − − − 120 − − Typ. − − − − − 0.3 − 150 35 Max. ∠’ − − 0.5 0.5 1.0 390 − − Unit V V V ÂľA ÂľA V − MHz pF Conditions IC=50ÂľA IC=1mA IE=50ÂľA VCB=40V VEB=5V IC/IB=4A/0.1A ∗ VCE=2V, IC= 0.5A ∗ VCE=6V, IE=−50mA, f=100MHz VCE=20V, IE=0A, f=1MHz www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.11 - Re.

Part

D2118

Description

2SD2118



Feature


Low VCE(sat) transistor (strobe flash) 2 SD2118 zFeatures 1) Low VCE(sat). VCE( sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain character istics. 3) Complements the 2SB1412. zD imensions (Unit : mm) 2SD2118 zStructu re Epitaxial planar type NPN silicon tr ansistor ROHM : CPT3 EIAJ : SC-63 zAb solute maximum ratings (Ta=25°C) Para meter Symbol Limi.
Manufacture

Rohm

Datasheet
Download D2118 Datasheet




 D2118
Low VCE(sat) transistor (strobe flash)
2SD2118
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.25V (Typ.)
(IC/IB = 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1412.
zDimensions (Unit : mm)
2SD2118
zStructure
Epitaxial planar type
NPN silicon transistor
ROHM : CPT3
EIAJ : SC-63
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
IC 5
ICP 10
Collector power
dissipation
2SD2118
Junction temperature
PC
Tj
1
10
150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw=10ms
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
W(Tc=25°C)
°C
°C
∗ Denotes hFE
(1) Base
(2) Collector
(3) Emitter
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
50
20
6
−
−
−
120
−
−
Typ.
−
−
−
−
−
0.3
−
150
35
Max.
−
−
−
0.5
0.5
1.0
390
−
−
Unit
V
V
V
ÂľA
ÂľA
V
−
MHz
pF
Conditions
IC=50ÂľA
IC=1mA
IE=50ÂľA
VCB=40V
VEB=5V
IC/IB=4A/0.1A
∗
VCE=2V, IC=0.5A
∗
VCE=6V, IE=−50mA, f=100MHz
VCE=20V, IE=0A, f=1MHz
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.11 - Rev.C




 D2118
2SD2118
zPackaging specifications and hFE
Type
2SD2118
Package
Taping
Code
TL
hFE Basic ordering unit (pieces) 2500
QR
hFE values are classified as follows :
Item Q
R
hFE 120 to 270 180 to 390
zElectrical characteristic curves
10
5 VCE=2V
2 Ta=100°C
1 25°C
−25°C
0.5
0.2
0.1
0.05
0.02
0.01
5m
2m
1m
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
5000
2000
1000
500
Ta=100°C
25°C
−25°C
VCE=1V
200
100
50
20
10
5
1m 2m 5m 0.010.02 0.05 0.10.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs.
collector current ( ΙΙ )
2
1
0.5
0.2
0.1
0.05
lC/lB=10
Ta=100°C
25°C
−25°C
0.02
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter
saturation voltage vs.
collector current ( ΙΙ )
5
50mA
45mA
4
3
30mA
Ta=25°C
25mA
20mA
15mA
40mA
35mA
10mA
2 5mA
1
0 IB=0mA
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
5000
2000
1000
500
Ta=100°C
25°C
−25°C
VCE=2V
200
100
50
20
10
5
1m 2m 5m0.010.02 0.050.10.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain vs.
collector current ( ΙΙΙ )
2
1
0.5
0.2
0.1
0.05
lC/lB=30
Ta=100°C
25°C
−25°C
0.02
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.8 Collector-emitter
saturation voltage vs.
collector current ( ΙΙΙ )
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
2/3
Data Sheet
5000
2000
1000
500
Ta=25°C
VCE=5V
200 2V
100 1V
50
20
10
5
1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs.
collector current ( Ι )
2
Ta=25°C
1
0.5
0.2
0.1
0.05
IC/IB=50
40
0.02 30
10
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1
2
5 10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter
saturation voltage vs.
collector current ( Ι )
2
1
0.5
0.2
0.1
0.05
lC/lB=40
Ta=100°C
25°C
−25°C
0.02
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.9 Collector-emitter
saturation voltage vs.
collector current (IV)
2009.11 - Rev.C




 D2118
2SD2118
2
1
0.5
0.2
0.1
0.05
lC/lB=50
Ta=100°C
25°C
−25°C
0.02
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.10 Collector-emitter
saturation voltage vs.
collector current (V)
50
20
10 Ic max (Pulse)
Ic max (Pulse)
5
Ta=25 (°C)
Single pulse
2
1
500m
200m
100m
50m
20m
10m
0.2 0.5 1 2 5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.13 Safe operating area
(2SD2118)
1000
500
Ta=25°C
VCE=6V
200
100
50
20
10
5
2
1
−1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1
EMITTER CURRENT : IE (A)
Fig.11 Gain bandwidth product vs.
emitter current
Data Sheet
1000
500
200
Ta=25°C
f=1MHz
IC=0A
IE=0A
Cib
100
50
Cob
20
10
0.1 0.2 0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.12 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
3/3
2009.11 - Rev.C



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