BR3DA2118D

2SD2118(BR3DA2118D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package. / Features hFE ，， 2SB1412(BR3CA1412D)。 Excellent hFE linearity, low VCE(sat), complements the 2SB1412(BR3CA1412D). / Applications ，。 Strobe flash applications, medium power amplifier applications. / Equivalent Circuit / Pinning 12 3 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol Q R hFE Range 120～270 180～390 http://www.fsbrec.com 1/6 2SD2118(BR3DA2118D) Rev.C Feb.-2015 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous Collector Power Dissipation Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM PC(Ta=25℃) PC(TC=25℃) Tj Tstg DATA SHEET Rating 50 20 6.0 5.0 10 1.0 10 150 -55～150 Unit V V V A mA W W ℃ ℃ / Electrical Characteristics(Ta=25℃) Parameter Symbol Test Conditions Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage VCBO VCEO IC=50μA IC=1.0mA IE=0 IB=0 Emitter to Base Breakdown Voltage VEBO IE=50μA IC=0 Collector Cut-Off Current ICBO VCB=40V IE=0 Emitter Cut-Off Current IEBO VEB=5.0V IC=0 DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector output capacitance hFE VCE=2.0V VCE(sat) fT Cob IC=4.0A V...