STH400N4F6-2

STH400N4F6-2, STH400N4F6-6 Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A STripFET™ VI DeepGATE™ Power MOSFETs Datasheet - production data Features TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Order codes VDS RDS(on) max ID STH400N4F6-2 STH400N4F6-6 40 V 1.15 mΩ 180 A Designed for automotive applications and AEC-Q101 qualified Low gate charge Very low on-resistance High avalanche ruggedness Figure 1. Internal schematic diagram D(TAB) D(TAB) Applications Switching applications Description G(1) S(2, 3) H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) H2PAK-6 AM14551V1 These devices are N-channel Power MOSFETs th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. Order codes STH400N4F6-2 STH400N4F6-6 Table 1. Device summary Marking Package 400N4F6 2 H PAK-2 2 H PAK-6 Packaging Tape and reel February 2014 This is information on a product in full production. DocID023429 Rev 2 1/18 www.st.com Contents Contents STH400N4F6-2, STH400N4F6-6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Pa...