N-channel Power MOSFET
STH400N4F6-2, STH400N4F6-6
Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A
STripFET™ VI DeepGATE™ Power MOSFETs
Data...
Description
STH400N4F6-2, STH400N4F6-6
Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A
STripFET™ VI DeepGATE™ Power MOSFETs
Datasheet - production data
Features
TAB
2 3
1
H2PAK-2
TAB
7 1
H2PAK-6
Order codes
VDS
RDS(on) max ID
STH400N4F6-2 STH400N4F6-6
40 V
1.15 mΩ 180 A
Designed for automotive applications and AEC-Q101 qualified
Low gate charge Very low on-resistance High avalanche ruggedness
Figure 1. Internal schematic diagram
D(TAB)
D(TAB)
Applications
Switching applications
Description
G(1)
S(2, 3) H2PAK-2
G(1)
S(2, 3, 4, 5, 6, 7) H2PAK-6
AM14551V1
These devices are N-channel Power MOSFETs
th
developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
Order codes STH400N4F6-2 STH400N4F6-6
Table 1. Device summary
Marking
Package
400N4F6
2
H PAK-2
2
H PAK-6
Packaging Tape and reel
February 2014
This is information on a product in full production.
DocID023429 Rev 2
1/18
www.st.com
Contents
Contents
STH400N4F6-2, STH400N4F6-6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Pa...
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