C106B1 Datasheet: SILICON CONTROLLED RECTIFIER





C106B1 SILICON CONTROLLED RECTIFIER Datasheet

Part Number C106B1
Description SILICON CONTROLLED RECTIFIER
Manufacture Central Semiconductor
Total Page 2 Pages
PDF Download Download C106B1 Datasheet PDF

Features: C106A1 C106D1 C106B1 C106E1 C106C1 C106M 1 SILICON CONTROLLED RECTIFIER 4 AMP, 1 00 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTR AL SEMICONDUCTOR C106A1 series are PNPN silicon controlled rectifiers designed for applications such as temperature, light, speed control, process and remot e control, and warning systems where re liability of operation is important. MA RKING: FULL PART NUMBER TO-202 CASE M AXIMUM RATINGS: (TC=25°C unless otherw ise noted) C106 SYMBOL A1 Peak Repet itive Off-State Voltage VDRM, VRRM 100 RMS On-State Current IT(RMS) Peak O ne Cycle Surge (60Hz) I2t Value for Fus ing (t>1.5ms) ITSM I2t Peak Gate Powe r Average Gate Power Peak Forward Gate Current Peak Reverse Gate Voltage Stora ge Temperature Junction Temperature The rmal Resistance PGM PG(AV) IGFM VGRM T stg TJ ΘJC Thermal Resistance ΘJA C106 B1 200 C106 C1 300 C106 D1 400 4.0 20 0.5 0.5 0.1 0.2 6.0 -40 to + 150 -40 to +110 3.0 75 C106 E1 500 C106 M1 UNITS 600 V A A A2s .

Keywords: C106B1, datasheet, pdf, Central Semiconductor, SILICON, CONTROLLED, RECTIFIER, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

C106A1 C106D1
C106B1 C106E1
C106C1 C106M1
SILICON CONTROLLED RECTIFIER
4 AMP, 100 THRU 600 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR C106A1 series
are PNPN silicon controlled rectifiers designed for
applications such as temperature, light, speed control,
process and remote control, and warning systems
where reliability of operation is important.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
C106
SYMBOL
A1
Peak Repetitive Off-State Voltage
VDRM, VRRM 100
RMS On-State Current
IT(RMS)
Peak One Cycle Surge (60Hz)
I2t Value for Fusing (t>1.5ms)
ITSM
I2t
Peak Gate Power
Average Gate Power
Peak Forward Gate Current
Peak Reverse Gate Voltage
Storage Temperature
Junction Temperature
Thermal Resistance
PGM
PG(AV)
IGFM
VGRM
Tstg
TJ
ΘJC
Thermal Resistance
ΘJA
C106
B1
200
C106
C1
300
C106
D1
400
4.0
20
0.5
0.5
0.1
0.2
6.0
-40 to +150
-40 to +110
3.0
75
C106
E1
500
C106
M1 UNITS
600 V
A
A
A2s
W
W
A
V
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=110°C
VTM
IFM=4.0A
IGT VAK=6.0V, RL=100Ω, RGK=1.0KΩ
IGT VAK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C
VGT
VAK=6.0V, RL=100Ω, RGK=1.0KΩ
0.4
VGT
VAK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C
0.5
VGT
VAK=Rated VDRM, RL=3.0KΩ, RGK=1.0KΩ, TC=110°C 0.2
IHX VD=12V, RGK=1.0KΩ
0.3
IHX VD=12V, RGK=1.0KΩ, TC=-40°C
0.4
IHX VD=12V, RGK=1.0KΩ, TC=110°C
0.14
ILX VD=12V, RGK=1.0KΩ
0.3
ILX VD=12V, RGK=1.0KΩ, TC=-40°C
0.4
dv/dt
VD=Rated VDRM, RGK=1.0KΩ, TC=110°C
tgt (turn-on time)
tq (turn-off time)
TYP MAX UNITS
10 μA
100 μA
2.2 V
200 μA
500 μA
0.8 V
1.0 V
V
3.0 mA
6.0 mA
2.0 mA
4.0 mA
8.0 mA
8.0 V/μs
1.2 μs
40 μs
R1 (23-January 2012)

     






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)