C106M1

C106A1 C106D1 C106B1 C106E1 C106C1 C106M1 SILICON CONTROLLED RECTIFIER 4 AMP, 100 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C106A1 series are PNPN silicon controlled rectifiers designed for applications such as temperature, light, speed control, process and remote control, and warning systems where reliability of operation is important. MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) C106 SYMBOL A1 Peak Repetitive Off-State Voltage VDRM, VRRM 100 RMS On-State Current IT(RMS) Peak One Cycle Surge (60Hz) I2t Value for Fusing (t>1.5ms) ITSM I2t Peak Gate Power Average Gate Power Peak Forward Gate Current Peak Reverse Gate Voltage Storage Temperature Junction Temperature Thermal Resistance PGM PG(AV) IGFM VGRM Tstg TJ ΘJC Thermal Resistance ΘJA C106 B1 200 C106 C1 300 C106 D1 400 4.0 20 0.5 0.5 0.1 0.2 6.0 -40 to +150 -40 to +110 3.0 75 C106 E1 500 C106 M1 UNITS 600 V A A A2s W W A V °C °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=110°C VTM IFM=4.0A IGT VAK=6.0V, RL=100Ω, RGK=1.0KΩ IGT VAK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C VGT VAK=6.0V, RL=100Ω, RGK=1.0KΩ 0.4 VGT VAK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C 0.5 VGT VAK=Rated VDRM, RL=3.0KΩ, RGK=1.0KΩ, TC=110°C 0.2 IHX VD=12V, RGK=1.0KΩ 0.3 IHX VD=12V, RGK=1.0KΩ, TC=-...