BFP540ESD

Low Noise Silicon Bipolar RF Transistor For ESD protected high gain low noise amplifier High ESD robustness typical value 1000 V (HBM) Outstanding Gms = 21.5 dB @ 1.8 GHz Minimum noise figure NFmin = 0.9 dB @ 1.8 GHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available BFP540ESD 3 4 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540ESD Marking Pin Configuration AUs 1=B 2=E 3=C 4=E - - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 77°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA TStg 1TS is measured on the emitter lead at the soldering point to the pcb Value 4.5 4 10 10 1 80 8 250 150 -65 ... 150 -65 ... 150 Unit V mA mW °C 1 2013-09-13 BFP540ESD Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 290 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5...