P-Channel MOSFET
Product Summary
V(BR)DSS -25V
RDS(ON)
10Ω @ VGS = -4.5V 13Ω @ VGS = -2.7V
ID TA = +25°C
-166mA
-138mA
Description
Th...
Description
Product Summary
V(BR)DSS -25V
RDS(ON)
10Ω @ VGS = -4.5V 13Ω @ VGS = -2.7V
ID TA = +25°C
-166mA
-138mA
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Load Switch Portable Applications Power Management Functions
DMP213DUFA
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.4mm Ultra Low Profile Package for Thin Application 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 Low VGS(th), Can be Driven Directly From a Battery Low RDS(on) ESD Protected Gate (>6kV Human Body Mode) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X2-DFN0806-3 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4 Weight: 0.00043 grams (approximate)
X2-DFN0806-3
Drain
Gate
Body Diode
ESD HBM >6kV
Bottom View
Top View Package Pin Configuration
Gate Protection Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMP213DUFA-7B
Case X2-DFN0806-3
Packaging 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/qua...
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