Document
ADVANCE INFORMATION
DMP21D5UFD
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -20V
RDS(ON) max
1.0Ω @ VGS = -4.5V 1.5Ω @ VGS = -2.5V 2.0Ω @ VGS = -1.8V 3.0Ω @ VGS = -1.5V
Package X1-DFN1212-3
ID TA = +25°C
-600mA -500mA -400mA -250mA
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
• DC-DC Converters • Power Management Functions
Features
• Low On-Resistance • Very Low Gate Threshold Voltage VGS(TH), 1.0V max • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1212-3 • Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: NiPdAu over Copper leadframe. Solderable per MIL-
STD-202, Method 208 e4 • Terminal Connections: See Diagram • Weight: 0.005 grams (approximate)
Drain
ESD PROTECTED
Top View
Bottom View
Gate
Gate Protection Diode
Source
Equivalent Circuit
Pin-out Top view
Ordering Information (Note 4)
Notes:
Part Number DMP21D5UFD-7
Case X1-DFN1212-3
Packaging 3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
KP2 YM
KP2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September)
Date Code Key Year Code
Month Code
2011 Y
Jan Feb 12
2012 Z
Mar 3
2013 A
Apr May 45
2014 B
Jun Jul 67
2015 C
Aug 8
Sep 9
2016 D
Oct O
2017 E
Nov Dec ND
DMP21D5UFD
Document number: DS35931 Rev. 4 - 2
1 of 6 www.diodes.com
August 2012
© Diodes Incorporated
ADVANCE INFORMATION
DMP21D5UFD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -1.8V
Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode continuous Current
Steady State
Steady State
TA = +25°C TA = +70°C TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
ID
IDM IS
Value -20 ±8
-600 -500
-400 -300
-2 -800
Units V V
mA
mA
A mA
Thermal Characteristics
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Oper.