P-Channel MOSFET
ADVANCE INNEFWORPRMOADTIUOCNT
DMP2540UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = -4.5V, TA = ...
Description
ADVANCE INNEFWORPRMOADTIUOCNT
DMP2540UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = -4.5V, TA = +25°C)
VDSS -25V
RDS(on) 33mΩ
Qg 4.8nC
Qgd 1.0nC
ID -5.2A
Features and Benefits
LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 33mΩ to Minimize On-State Losses Qg = 4.8nC for Ultra-Fast Switching
Vgs(th) = -0.6V typ. for a Low Turn-On Potential CSP with Footprint 1.5mm × 1.5mm Height = 0.62mm for Low Profile ESD = 6kV HBM Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET is designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Mechanical Data
Case: U-WLB1515-9 Terminal Connections: See Diagram Below Weight: 0.0018 grams (Approximate)
Battery Management Load Switch Battery Protection
GDS
Drain
ESD PROTECTED TO 6kV
D DS
DSS
Top-View Pin Configuration
Gate
Gate Protection Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMP2540UCB9-7
U-WLB1515-9
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporat...
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