DMP2540UCB9

ADVANCE INNEFWORPRMOADTIUOCNT DMP2540UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) VDSS -25V RDS(on) 33mΩ Qg 4.8nC Qgd 1.0nC ID -5.2A Features and Benefits  LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 33mΩ to Minimize On-State Losses Qg = 4.8nC for Ultra-Fast Switching  Vgs(th) = -0.6V typ. for a Low Turn-On Potential  CSP with Footprint 1.5mm × 1.5mm  Height = 0.62mm for Low Profile  ESD = 6kV HBM Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET is designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data  Case: U-WLB1515-9  Terminal Connections: See Diagram Below  Weight: 0.0018 grams (Approximate)  Battery Management  Load Switch  Battery Protection GDS Drain ESD PROTECTED TO 6kV D DS DSS Top-View Pin Configuration Gate Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Notes: Part Number Case Packaging DMP2540UCB9-7 U-WLB1515-9 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporat...