DMP3100L

DMP3100L P-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance: 100mΩ @ VGS = -10V, ID = -2.7A 170mΩ @ VGS = -4.5V, ID = -2.0A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability SOT-23 Gate Mechanical Data Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) Drain D TOP VIEW Source EQUIVALENT CIRCUIT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) VGS = -10V Steady State Pulsed Drain Current (Note 3) TA = 25°C TA = 70°C Symbol VDSS VGSS ID IDM GS TOP VIEW Value -30 ±20 -2.7 -2 -8 Units V V A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 1.08 115 -55 to +150 Units W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Sym...