Document
DMP32D9UFZ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) max
5Ω @ VGS = -4.5V 6Ω @ VGS = -2.5V 7Ω @ VGS = -1.8V 10Ω @ VGS = -1.5V
ID max TA = +25°C
-0.2A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
General Purpose Interfacing Switch Power Management Functions Analog Switch
Features and Benefits
Low Package Profile, 0.42mm Maximum Package Height 0.62mm x 0.62mm Package Footprint Low On-Resistance Very Low Gate Threshold Voltage, -1.0V Max ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X2-DFN0606-3 Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate)
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View Package Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMP32D9UFZ-7B
X2-DFN0606-3
10k/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
U2 = Product Type Marking Code
Top View Bar Denotes Gate and Source Side
DMP32D9UFZ
Document number: DS36842 Rev. 3 - 2
1 of 7 www.diodes.com
December 2018
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V Pulsed Drain Current (Note 6)
Steady State
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
IDM
DMP32D9UFZ
Value -30 ±10 -200 -100 -700
Unit V V
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range
Steady State Steady State
Symbol PD RJA
TJ, TSTG
Value 390 322
-55 to +150
Unit mW °C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Symbol
@TC = +25°C
BVDSS IDSS IGSS
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VSD
Ciss Coss Crss Qg Qgs Qgd tD(ON)
tR tD(OFF)
tF
Min
-30 — —
-0.4 — — — — — —
— — — — — — — — — —
Typ
— — —
— — — — — 6 -0.75
22.5 2.9 2.1 0.35 0.06 0.09 3.1 2.3 19.9 10.5
Max
— -100 ±10
-1.0 5 6 7 10 —
-1.0
— — — — — — — — — —
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit Test Condition
V VGS = 0V, ID = -250μA nA VDS = -24V, VGS = 0V µA VGS = ±10V, VDS = 0V
V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -100mA VGS = -2.5V, ID = -50mA
Ω VGS = -1.8V, ID = -20mA VGS = -1.5V, ID = -10mA VGS = -1.2V, ID = -1mA
V VGS = 0V, IS = -10mA
pF pF VDS = -15V, VGS = 0V,
f = 1.0MHz pF nC nC VGS = -4.5V, VDS = - 5V,
ID = -200mA nC ns ns VDD = -10V, VGS = -4.5V, ns RG = 6Ω, ID = -200mA ns
DMP32D9UFZ
Document number: DS36842 Rev. 3 - 2
2 of 7 www.diodes.com
December 2018
© Diodes Incorporated
DMP32D9UFZ
-ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.8
VGS = -4.5V
0.7 VGS = -4.0V
0.6 VGS = -3.5V
VGS = -3.0V VGS = -2.5V
0.5
VGS = -2.0V
0.4
0.3
VGS = -1.5V
0.2
0.1
VGS = -1.0V
VGS = -1.2V
0.0 0
100
1 23 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics
5
10
VGS = -1.5V VGS = -1.8V
1
VGS = -2.5V VGS = -4.5V
0.1 0
1.8 1.6
0.1 0.2 0.3 0.4 0.5 0.6 0.7
-ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs.
Drain Current and Gate Vo.