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DMP32D9UFZ Dataheets PDF



Part Number DMP32D9UFZ
Manufacturers Diodes
Logo Diodes
Description P-Channel MOSFET
Datasheet DMP32D9UFZ DatasheetDMP32D9UFZ Datasheet (PDF)

DMP32D9UFZ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -30V RDS(ON) max 5Ω @ VGS = -4.5V 6Ω @ VGS = -2.5V 7Ω @ VGS = -1.8V 10Ω @ VGS = -1.5V ID max TA = +25°C -0.2A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  General Purpose Interfacing Switch  Power Management Functions  Analog Switch Features and .

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DMP32D9UFZ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -30V RDS(ON) max 5Ω @ VGS = -4.5V 6Ω @ VGS = -2.5V 7Ω @ VGS = -1.8V 10Ω @ VGS = -1.5V ID max TA = +25°C -0.2A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  General Purpose Interfacing Switch  Power Management Functions  Analog Switch Features and Benefits  Low Package Profile, 0.42mm Maximum Package Height  0.62mm x 0.62mm Package Footprint  Low On-Resistance  Very Low Gate Threshold Voltage, -1.0V Max  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: X2-DFN0606-3  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.001 grams (Approximate) ESD PROTECTED Bottom View Equivalent Circuit Top View Package Pin Configuration Ordering Information (Note 4) Notes: Part Number Case Packaging DMP32D9UFZ-7B X2-DFN0606-3 10k/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information U2 = Product Type Marking Code Top View Bar Denotes Gate and Source Side DMP32D9UFZ Document number: DS36842 Rev. 3 - 2 1 of 7 www.diodes.com December 2018 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 5) VGS = -4.5V Pulsed Drain Current (Note 6) Steady State TA = +25°C TA = +70°C Symbol VDSS VGSS ID IDM DMP32D9UFZ Value -30 ±10 -200 -100 -700 Unit V V mA mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Steady State Steady State Symbol PD RJA TJ, TSTG Value 390 322 -55 to +150 Unit mW °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol @TC = +25°C BVDSS IDSS IGSS VGS(TH) Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VSD Ciss Coss Crss Qg Qgs Qgd tD(ON) tR tD(OFF) tF Min -30 — — -0.4 — — — — — — — — — — — — — — — — Typ — — — — — — — — 6 -0.75 22.5 2.9 2.1 0.35 0.06 0.09 3.1 2.3 19.9 10.5 Max — -100 ±10 -1.0 5 6 7 10 — -1.0 — — — — — — — — — — Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. Unit Test Condition V VGS = 0V, ID = -250μA nA VDS = -24V, VGS = 0V µA VGS = ±10V, VDS = 0V V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -100mA VGS = -2.5V, ID = -50mA Ω VGS = -1.8V, ID = -20mA VGS = -1.5V, ID = -10mA VGS = -1.2V, ID = -1mA V VGS = 0V, IS = -10mA pF pF VDS = -15V, VGS = 0V, f = 1.0MHz pF nC nC VGS = -4.5V, VDS = - 5V, ID = -200mA nC ns ns VDD = -10V, VGS = -4.5V, ns RG = 6Ω, ID = -200mA ns DMP32D9UFZ Document number: DS36842 Rev. 3 - 2 2 of 7 www.diodes.com December 2018 © Diodes Incorporated DMP32D9UFZ -ID, DRAIN CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.8 VGS = -4.5V 0.7 VGS = -4.0V 0.6 VGS = -3.5V VGS = -3.0V VGS = -2.5V 0.5 VGS = -2.0V 0.4 0.3 VGS = -1.5V 0.2 0.1 VGS = -1.0V VGS = -1.2V 0.0 0 100 1 23 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 10 VGS = -1.5V VGS = -1.8V 1 VGS = -2.5V VGS = -4.5V 0.1 0 1.8 1.6 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Vo.


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