SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CZDM1003N
SURFACE MOUNT SILICON N-CHANNEL
ENHANCEMENT-MODE MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The...
Description
CZDM1003N
SURFACE MOUNT SILICON N-CHANNEL
ENHANCEMENT-MODE MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CZDM1003N is a 3.0 Amp, 100 Volt silicon N-Channel enhancementmode MOSFET, designed for motor control and relay driver applications. This MOSFET offers high current, low rDS(ON), and low gate charge.
SOT-223 CASE
MARKING: FULL PART NUMBER
APPLICATIONS: Motor control Relay driver DC-DC converters
FEATURES:
Low rDS(ON) High current Low gate charge
MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VDS VGS ID IDM PD
TJ, Tstg ΘJA
100 20 3.0 12 2.0 -55 to +150 62.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=100V, VGS=0
BVDSS
VGS=0, ID=250μA
100
VGS(th)
VGS=VDS, ID=250μA
2.0
VSD
VGS=0, IS=3.0A
rDS(ON)
VGS=10V, ID=2.0A
70
Crss
VDS=25V, VGS=0, f=1.0MHz
55
Ciss VDS=25V, VGS=0, f=1.0MHz
705
Coss
VDS=25V, VGS=0, f=1.0MHz
55
Qg(tot)
VDS=80V, VGS=10V, ID=9.2A
15
Qgs VDS=80V, VGS=10V, ID=9.2A
3.0
Qgd VDS=80V, VGS=10V, ID=9.2A
5.5
ton VDD=50V, VGS=10V, ID=9.2A
40
toff RG=18Ω
60
MAX 100 1.0
4.0 1.3 150 70 975 80
80 155
UNITS V V A A W °C
°C/W
UNITS nA μA V V V mΩ pF pF pF nC nC nC ns ns
R1 (21-January 2013)
CZDM1003N SURFACE MOUN...
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