CZDM1003N

CZDM1003N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZDM1003N is a 3.0 Amp, 100 Volt silicon N-Channel enhancementmode MOSFET, designed for motor control and relay driver applications. This MOSFET offers high current, low rDS(ON), and low gate charge. SOT-223 CASE MARKING: FULL PART NUMBER APPLICATIONS: Motor control Relay driver DC-DC converters FEATURES: Low rDS(ON) High current Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 100 20 3.0 12 2.0 -55 to +150 62.5 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=100V, VGS=0 BVDSS VGS=0, ID=250μA 100 VGS(th) VGS=VDS, ID=250μA 2.0 VSD VGS=0, IS=3.0A rDS(ON) VGS=10V, ID=2.0A 70 Crss VDS=25V, VGS=0, f=1.0MHz 55 Ciss VDS=25V, VGS=0, f=1.0MHz 705 Coss VDS=25V, VGS=0, f=1.0MHz 55 Qg(tot) VDS=80V, VGS=10V, ID=9.2A 15 Qgs VDS=80V, VGS=10V, ID=9.2A 3.0 Qgd VDS=80V, VGS=10V, ID=9.2A 5.5 ton VDD=50V, VGS=10V, ID=9.2A 40 toff RG=18Ω 60 MAX 100 1.0 4.0 1.3 150 70 975 80 80 155 UNITS V V A A W °C °C/W UNITS nA μA V V V mΩ pF pF pF nC nC nC ns ns R1 (21-January 2013) CZDM1003N SURFACE MOUN...