Document
Data Sheet, Rev. 1.0, Juni 2008
BGR420
NPN Silicon RF Transistor With Bias Circuitry
Small Signal Discretes
Edition 2008-06-06 Published by Infineon Technologies AG, 85579 Neubiberg, Germany © Infineon Technologies AG 2008. All Rights Reserved.
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BGR420, NPN Silicon RF Transistor With Bias Circuitry
Revision History: 2008-06-06, Rev. 1.0
Prevision History: no previous version
Page
Subjects (major changes since last revision)
Trademarks SIEGET® is a registered trademark of Infineon Technologies AG.
BGR420
Data Sheet
3 Rev. 1.0, 2008-06-06
BGR420
NPN Silicon RF Transistor With Bias Circuitry*
1 NPN Silicon RF Transistor With Bias Circuitry*
Features • Noise figure NF = 1.5 dB at 0.4 GHz • Gain S21 = 26 dB at 0.4 GHz • On chip bias circuitry, 13 mA bias current at VCC = 3.6 V;
VBB = 2.8 V • SIEGET ® 25 GHz fT-Line • Pb-free (RoHS compliant) package
* Short term description
3
4
2 1
Applications • LNAs
2 Description
The BGR420 is a monolithic silicon amplifier with a NPN silicon RF transistor and integrated resistors for biasing.
Type BGR420
Package SOT343
Marking AWs
Note: ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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Figure 1 Circuit diagram
Note: Due to design there is an additional diode between emitter and collector, which does not affect normal operation for common emitter configuration.
Data Sheet
4 Rev. 1.0, 2008-06-06
BGR420
Description
Table 1 Pin 1 2 3 4
2.1
Pinning table
Function RFIN GND RFOUT (VCC) VBB
Maximum Ratings
Note: All Voltages refer to GND-node
Table 2 Maximum ratings
Parameter
Symbol
Value
Current at pin VCC
ICC 25
Voltage at pin VCC
VCC 13
Current at pin VBB
IBB 2.2
Voltage at pin VBB
VBB 8
Current at pin RFIN
IIN
3
Voltage at pin RFIN VIN 5
Total power dissipation1) TS = 115 °C
Ptot
120
Operation junction temperature range Tjo
-65... 150
Storage junction temperature range
Tjstg
-65... 150
1) TS is measured on the emitter (GND) lead at the soldering point to the pcb
Unit mA V mA V mA V mW
°C °C
Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions even only for a short moment may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Absolute maximum ratings typically differ heavily from recommended operation conditions
2.2 Thermal Resistance
Table 3 Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 290
1) For calculation of RthJA please refer to Application Note Thermal Resistance.
Unit K/W
Data Sheet
5 Rev. 1.0, 2008-06-06
3 Electrical Characteristics
BGR420
Electrical Characteristics
Table 4 DC characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
VCC-GND cutoff current
ICC
10
Current at pin VCC
ICC 7
13 20
Unit µA mA
Note / Test Condition
VCC = 13 V, IBB = 0, VIN = 0 VBB = 2.8 V, IIN = 0, VCC = 3.6 V
Table 5
AC characteristics (measured in test circuit Figure 2; verified by random sampling) TA = 25 °C, VBB = 2.8 V, VCC = 3.6 V, Z0 = 50 Ω, unless otherwise specified
Parameter
Symbol
Values
Unit Note /
Min.
Typ.
Max.
Test Condition
Insertion power gain S21 26.0 dB f = 0.4 GHz 15.5 f = 1.8 GHz
Reverse isolation
S12
-32.5
dB f = 0.4 GHz
-23.4
f = 1.8 GHz
Noise figure, ZS = ZSopt
NF
1.5 dB f = 0.4 GHz 1.7 f = 1.8 GHz
Third order intercept point at the output1)
OIP3
21 23
dBm f = 0.4 GHz f = 1.8 GHz
1 dB compression point at th.