BF5020

Silicon N-Channel MOSFET Tetrode Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage Integrated gate protection diodes Excellent noise figure High gain, high forward transadmittance Improved cross modulation at gain reduction Pb-free (RoHS compliant) package Qualified according AEC Q101 BF5020... 3 4 2 1 AGC G2 HF G1 Input RG1 VGG Drain GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF5020 SOT143 1 = S 2 = D 3 = G2 4 = G1 - - BF5020R SOT143R 1 = D 2 = S 3 = G1 4 = G2 - - BF5020W SOT343 1 = D 2 = S 3 = G1 4 = G2 - - Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS ≤ 76 °C, BF5020, BF5020R TS ≤ 94 °C, BF5020W Storage temperature Channel temperature Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot Tstg Tch Value 8 25 ± 10 ±6 200 200 -55 ... 150 150 HF Output + DC EHA07461 Marking KYs KYs KYs Unit V mA mA V mW °C 1 2009-10-01 Thermal Resistance Parameter Channel - soldering point1) BF5020, BF5020R BF5020W Symbol Rthchs BF5020... Value ≤ 370 ≤ 280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source...