Silicon N-Channel MOSFET Tetrode
Silicon N-Channel MOSFET Tetrode
• Designed for input stages of UHF- and VHF-tuners with AGC function
• Supporting 5 V o...
Description
Silicon N-Channel MOSFET Tetrode
Designed for input stages of UHF- and VHF-tuners with AGC function
Supporting 5 V operations and power saving 3 V operations
Integrated ESD gate protection diodes Very low noise figure High gain, high forward transadmittance Very good cross modulation at gain reduction Pb-free (RoHS compliant) package Qualified according AEC Q101
BF5030...
3
4
2 1
AGC G2 HF G1 Input
RG1
VGG
Drain GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF5030
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF5030R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
BF5030W
SOT343 1=D 2=S 3=G1 4=G2 -
-
HF Output + DC
EHA07461
Marking KXs KXs KXs
1 2009-05-05
BF5030...
Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS ≤ 94 °C, BF5030W TS ≤ 76 °C, BF5030, BF5030R Storage temperature Channel temperature
Thermal Resistance Parameter Channel - soldering point1) BF5030W BF5030, BF5030R
Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot
Tstg Tch
Symbol Rthchs
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value 8 25 ±1 ±6
200 200 -55 ... 150 150
Value
≤ 280 ≤ 370
Unit V mA mA V mW
°C
Unit K/W
2 2009-05-05
BF5030...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Drain-source breakdown voltage ID = 2...
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