RRE02VS4S

Data Sheet Rectifier Diode RRE02VS4S Applications General Rectification Features 1)Low VF 2)Small mold type. (TUMD2S) Dimensions (Unit : mm) 1.3±0.05 0.17±0.1 　　 0.05 Land size figure (Unit : mm) 1.1 TUMD2S 1.9±0.1 2.5±0.2 0.8 2.3 Construction Silicon epitaxial planer Structure 0.8±0.05 0.6±0.2 ROHM : TUMD2S 　　　 0.1 dot (year week factory) + day Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 　　　　　 0 0.25±0.05 1.75±0.1 3.5±0.05 2.75 8.0±0.2 2.8±0.05 1.43±0.05 4.0±0.1 φ1.0±0.2 　　　　　0 0.9±0.08 Absolute maximum ratings (Tc=25°C) Parameter Symbol Repetitive peak Reverse voltage Reverse voltage VRM VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Electrical characteristics (Tj=25°C) Parameter Symbol Forward voltage Reverse current VF IR Conditions D≤0.5 Direct voltage Glass epoxy substrate mounted R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Limits 400 400 0.2 Unit V V A 1 150 - 55 to +150 A °C °C Conditions IF=0.2A VR=400V Min. Typ. Max. － 0.95 1.1 － 0.01 1 Unit V μA www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.09 - Rev.A RRE02VS4S 　 Data Sheet FORWARD CURRENT:IF(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 0.1 0.01 Tj=150°C Tj=125°C Tj=25°C Tj=75°C 0.001 0 10 0.5 1 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 1.5 f=1MHz 1 0.1 0 10 10 20 REVERSE VOLTAGE:VR(V) VR-Ct C...