Document
Rectifier Diode
RRE07VSM4S
Series Standard Rectifier
Dimensions (Unit : mm)
1.40±0.10
Datasheet
Land size figure (Unit : mm)
0.17 0.10 0.05
1.1
2.00±0.10 2.50±0.20
0.8 2.3
Application General rectification
Features 1) Low forward voltage 2) Small mold type
(TUMD2SM)
TUMD2SM
0~0.10
Structure
0.80±0.05
ROHM : TUMD2SM
0.20 0.60 0.10
dot (year week factory) + day
Taping specifications (Unit : mm)
cathode anode
Construction Silicon epitaxial planar type
Absolute maximum ratings (Tl = 25°C)
Parameter
Symbol
Conditions
Limits
Repetitive peak reverse voltage VRM
Duty ≦0.5
400
Reverse voltage Average current
Non-repetitive forward surge current
VR Io IFSM
Direct voltage
On glass epoxy substrate, 60Hz half sin wave , Resistive load
Tl=118°C
60Hz half sin wave , Non-repetitive at Tj=25°C
400 0.7 2
Operating junction temperature
Tj
150
Storage temperature
Tstg
55 to 150
Unit V V A A °C °C
Electrical characteristics (Tj = 25°C)
Parameter
Symbol
Forward voltage Reverse current
VF IR
Conditions IF=0.7A VR=400V
Min. Typ. Max. Unit - 0.97 1.1 V - 0.01 1 A
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1/4
2015.04 - Rev.B
RRE07VSM4S Electrical characteristic curves
Data Sheet
FORWARD CURRENT : IF(A)
1
0.1 0.01
Tj = 150°C Tj = 125°C
Tj = 75°C
0.001 0
Tj = 25°C 200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS
REVERSE CURRENT : IR(nA)
10000 1000
Tj = 150°C
Tj = 125°C
100 Tj = 75°C 10 Tj = 25°C 1
0.1 0
100 200 300
REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS
400
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
PEAK SURGE FORWARD CURRENT : IFSM(A)
100 10
f = 1MHz Ta = 25°C
IFSM 8.3ms 8.3ms
1cyc.
10 1
1 0 5 10 15 20 25 30
REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS
0.1 1
Tj = 25°C 10 100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
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2/4
2015.04 - Rev.B
RRE07VSM4S Electrical characteristic curves
Data Sheet
PEAK SURGE FORWARD CURRENT : IFSM(A)
10 Tj = 25°C
1
IFSM time
0.1 1
10
TIME : t(ms) IFSM-t CHARACTERISTICS
100
1.0
D.C. 0.8
D = 0.5
0A Io
0V t
VR
D=t/T
T VR=VRMAX Tj=150°C
0.6 half sin wave
0.4 D = 0.2
D = 0.1 0.2
0.0 0
30 60 90 120 150
AMBIENT TEMPERATURE : Ta(°C) DERATING CURVE (Io-Ta)
AVERAGE RECTIFIED FORWARD CURRENT : Io(A)
TRANSIENT THERMAL IMPEDANCE : Rth (°C/W)
1000 100 10
Rth(j-a) Rth(j-l)
1 0.001 0.01 0.1 1 10 100 1000
TIME : t(s) Rth-t CHARACTERISTICS
1.2
1 D.C.
0.8 D = 0.5
0.6 half sin wave
0.4 D = 0.2 D = 0.1
0.2
0A Io
0V t
VR
D=t/T
T VR=VRMAX Tj=150°C
0 0 30 60 90 120 150
LEAD TEMPERATURE : Tl(°C) DERATING CURVE (Io-Tl)
AVERAGE RECTIFIED FORWARD CURRENT : Io(A)
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
3/4
2015.04 - Rev.B
RRE07VSM4S Electrical characteristic curves
FORWARD POWER DISSIPATION : PF (W)
1.4 D.C.
1.2 D = 0.5
1.0
half sin wave 0.8
D = 0.2 0.6
D = 0.1
0.4
0.2
0.0 0.0
Tj = 150°C
0.2 0.4 0.6 0.8 1.0
AVERAGE RECTIFIED FORWARD CURRENT : Io(A)
Io-PF CHARACTERISTICS
1.2
Data Sheet
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
4/4
2015.04 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and co.