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RRE07VSM4S Dataheets PDF



Part Number RRE07VSM4S
Manufacturers Rohm
Logo Rohm
Description Rectifying Diode
Datasheet RRE07VSM4S DatasheetRRE07VSM4S Datasheet (PDF)

Rectifier Diode RRE07VSM4S Series Standard Rectifier Dimensions (Unit : mm) 1.40±0.10 Datasheet Land size figure (Unit : mm) 0.17 0.10 0.05 1.1 2.00±0.10 2.50±0.20 0.8 2.3 Application General rectification Features 1) Low forward voltage 2) Small mold type (TUMD2SM) TUMD2SM 0~0.10 Structure 0.80±0.05 ROHM : TUMD2SM 0.20 0.60 0.10 dot (year week factory) + day Taping specifications (Unit : mm) cathode anode Construction Silicon epitaxial planar type Absolute maximum .

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Rectifier Diode RRE07VSM4S Series Standard Rectifier Dimensions (Unit : mm) 1.40±0.10 Datasheet Land size figure (Unit : mm) 0.17 0.10 0.05 1.1 2.00±0.10 2.50±0.20 0.8 2.3 Application General rectification Features 1) Low forward voltage 2) Small mold type (TUMD2SM) TUMD2SM 0~0.10 Structure 0.80±0.05 ROHM : TUMD2SM 0.20 0.60 0.10 dot (year week factory) + day Taping specifications (Unit : mm) cathode anode Construction Silicon epitaxial planar type Absolute maximum ratings (Tl = 25°C) Parameter Symbol Conditions Limits Repetitive peak reverse voltage VRM Duty ≦0.5 400 Reverse voltage Average current Non-repetitive forward surge current VR Io IFSM Direct voltage On glass epoxy substrate, 60Hz half sin wave , Resistive load Tl=118°C 60Hz half sin wave , Non-repetitive at Tj=25°C 400 0.7 2 Operating junction temperature Tj 150 Storage temperature Tstg 55 to 150 Unit V V A A °C °C Electrical characteristics (Tj = 25°C) Parameter Symbol Forward voltage Reverse current VF IR Conditions IF=0.7A VR=400V Min. Typ. Max. Unit - 0.97 1.1 V - 0.01 1 A www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/4 2015.04 - Rev.B RRE07VSM4S Electrical characteristic curves Data Sheet FORWARD CURRENT : IF(A) 1 0.1 0.01 Tj = 150°C Tj = 125°C Tj = 75°C 0.001 0 Tj = 25°C 200 400 600 800 1000 1200 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR(nA) 10000 1000 Tj = 150°C Tj = 125°C 100 Tj = 75°C 10 Tj = 25°C 1 0.1 0 100 200 300 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 400 CAPACITANCE BETWEEN TERMINALS : Ct(pF) PEAK SURGE FORWARD CURRENT : IFSM(A) 100 10 f = 1MHz Ta = 25°C IFSM 8.3ms 8.3ms 1cyc. 10 1 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 0.1 1 Tj = 25°C 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/4 2015.04 - Rev.B RRE07VSM4S Electrical characteristic curves Data Sheet PEAK SURGE FORWARD CURRENT : IFSM(A) 10 Tj = 25°C 1 IFSM time 0.1 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 1.0 D.C. 0.8 D = 0.5 0A Io 0V t VR D=t/T T VR=VRMAX Tj=150°C 0.6 half sin wave 0.4 D = 0.2 D = 0.1 0.2 0.0 0 30 60 90 120 150 AMBIENT TEMPERATURE : Ta(°C) DERATING CURVE (Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) TRANSIENT THERMAL IMPEDANCE : Rth (°C/W) 1000 100 10 Rth(j-a) Rth(j-l) 1 0.001 0.01 0.1 1 10 100 1000 TIME : t(s) Rth-t CHARACTERISTICS 1.2 1 D.C. 0.8 D = 0.5 0.6 half sin wave 0.4 D = 0.2 D = 0.1 0.2 0A Io 0V t VR D=t/T T VR=VRMAX Tj=150°C 0 0 30 60 90 120 150 LEAD TEMPERATURE : Tl(°C) DERATING CURVE (Io-Tl) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/4 2015.04 - Rev.B RRE07VSM4S Electrical characteristic curves FORWARD POWER DISSIPATION : PF (W) 1.4 D.C. 1.2 D = 0.5 1.0 half sin wave 0.8 D = 0.2 0.6 D = 0.1 0.4 0.2 0.0 0.0 Tj = 150°C 0.2 0.4 0.6 0.8 1.0 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-PF CHARACTERISTICS 1.2 Data Sheet www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/4 2015.04 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and co.


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