N-channel SiC power MOSFET
S2308
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.)
ID
1200V 280mW 14A*1
Data Sheet
lFeatures 1) Low on-re...
Description
S2308
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.)
ID
1200V 280mW 14A*1
Data Sheet
lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive
lInner circuit
(D)
(G) (S)
(G) Gate (D) Drain (S) Source
*1 Body Diode
lApplication Solar inverters DC/DC converters Switch mode power supplies Induction heating Motor drives
lAbsolute maximum ratings (Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Pulsed drain current
Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec)
Junction temperature
Range of storage temperature
Symbol
VDSS ID *1 ID,pulse *2 VGSS VGSS-surge*3 Tj Tstg
Value 1200
14 35 -6 to 22 -10 to 26 175 -55 to +175
Unit V A A V V °C °C
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1/11
2016.02 - Rev.C
S2308
Data Sheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
Unit
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
1200
-
-V
Zero gate voltage drain current
Gate - Source leakage current Gate - Source leakage current Gate threshold voltage
Static drain - source on - state resistance
Gate input resistance
VDS = 1200V, VGS = 0V IDSS Tj = 25°C
Tj = 150°C IGSS+ VGS = +22V, VDS = 0V IGSS- VGS = -6V, VDS = 0V VGS (th) VDS = VGS, ID = 1.4mA
VGS = 18V, ID = 4A RDS(on) *4 Tj = 25°C
Tj = 125°C RG f = 1MHz, open drain
1.6
-
*1 Limited only by maximum t...
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