S6201

S6201 SiC Schottky Barrier Diode Bare Die VR 650V IF 6A*1 QC 9nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diode Data Sheet (C) Cathode (A) Anode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 650 VR 650 IF 6*1 24*2 IFSM 91*3 18*4 IFRM 26*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj Unit V V A A A A A °C °C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/3 2014.05 - Rev.A S6201 Data Sheet lElectrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. DC blocking voltage VDC IR =0.12mA 600 - - IF=6A,Tj=25°C - 1.35 1.55 Forward voltage VF IF=6A,Tj=150°C - 1.55 - IF=6A,Tj=175°C - 1.63 - VR=600V,Tj=25°C - 1.2 120 Reverse current IR VR=600V,Tj=150°C - 18 - VR=600V,Tj=175°C - 42 - Total capacitance VR=1V,f=1MHz C VR=600V,f=1MHz - 219 - 22 - Total capacitive charge Qc VR=400V,di/dt=350A/ms - 9 - Switching time tc VR=400V,di/dt=350A/ms - 12 - Unit V V V V mA mA mA pF pF nC ns www.rohm.com © 2014 ROHM Co., Ltd. Al...