S6301
SiC Schottky Barrier Diode Bare Die
VR 1200V IF 5A*1 QC 17nC
lFeatures 1) Shorter recovery time 2) Reduced temper...
S6301
SiC
Schottky Barrier Diode Bare Die
VR 1200V IF 5A*1 QC 17nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
lConstruction Silicon carbide epitaxial planer type
Schottky diode
Data Sheet
(C) Cathode (A) Anode
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Junction temperature
VRM 1200
VR 1200
IF 5*1
23*2
IFSM
87*3
18*4
IFRM
25*5
Tj 175
Range of storage temperature
Tstg
-55 to +175
*1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj
Unit V V A A A A A °C °C
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1/3
2014.05 - Rev.A
S6301
Data Sheet
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
DC blocking voltage
VDC IR =0.1mA
1200
-
-
IF=5A,Tj=25°C
- 1.4 1.6
Forward voltage
VF IF=5A,Tj=150°C
- 1.8 -
IF=5A,Tj=175°C
- 1.9 -
VR=1200V,Tj=25°C - 5 100
Reverse current
IR VR=1200V,Tj=150°C
-
40
-
VR=1200V,Tj=175°C
-
65
-
Total capacitance
VR=1V,f=1MHz C
VR=800V,f=1MHz
- 270 - 21 -
Total capacitive charge
Qc VR=800V,di/dt=500A/ms - 17 -
Switching time
tc VR=800V,di/dt=500A/ms - 15 -
Unit
V V V V mA mA mA pF pF nC ns
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