S6304
SiC Schottky Barrier Diode Bare Die
VR 1200V IF 20A*1 QC 65nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
Data Sheet
(C) Cathode (A) Anode
lConstruction Silicon carbide epitaxial planer type Schottky diode
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value...
