FERD30SM100DJF

$ $ . $ $ .. $$ 3RZHU)/$7Œ[ Features ST proprietary process Reduce leakage current Low forward voltage drop High frequency operation ECOPACK®2 compliant component FERD30SM100DJF Field effect rectifier Datasheet − production data Description The FERD30SM100DJF is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. Table 1. Device summary Symbol Value IF(AV) VRRM Tj (max) VF(typ) 30 A 100 V +175 °C 0.395 V TM: PowerFLAT is a trademark of STMicroelectronics January 2015 This is information on a product in full production. DocID027306 Rev 1 1/8 www.st.com Characteristics 1 Characteristics FERD30SM100DJF Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified, anode terminals short-circuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current, δ = 0.5 Tc = 100 °C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj(1) Maximum operating junction temperature 1. dPtot < 1 condition to avoid thermal runaway for a diode on its own heatsink dTj Rth(j-a) 100 V 45 A 30 A 180 A -65 to + 175 °C 175 °C Symbol Rth(j-c) Junction to case Table 3. Thermal resistance Parameter Value (max) Unit 2.6 °C/W Table 4. Static electrical ...