STW33N60DM2

STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features Order code STB33N60DM2 STP33N60DM2 STW33N60DM2 VDS @ TJmax. 650 V 650 V 650 V RDS(on) max. 0.130 Ω 0.130 Ω 0.130 Ω ID 24 A 24 A 24 A Figure 1: Internal schematic diagram  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Order code STB33N60DM2 STP33N60DM2 STW33N60DM2 Description These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Marking Package Packing 33N60DM2 33N60DM2 33N60DM2 D²PAK TO-220 TO-247 Tape and reel Tube Tube November 2015 DocID026854 Rev 2 This is information on a product in full production. 1/20 www.st.com Contents Contents STB33N60DM2, STP33N60DM2, STW33N60DM2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...............................